机构

• 半导体研究所 [4]

采集方式

• OAI收割 [4]

内容类型

• 会议论文 [4]

发表日期

• 2011 [2]
• 2008 [2]

学科主题

• 半导体材料 [4]

筛选

浏览/检索结果: 共4条，第1-4条 帮助 限定条件 内容类型：会议论文     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer 会议论文  OAI收割 16th international conference on crystal growth (iccg16)/14th international conference on vapor growth and epitaxy (icvge14), beijing, peoples r china, aug 08-13, 2010 Pan X (Pan Xu); Wei M (Wei Meng); Yang CB (Yang Cuibai); Xiao HL (Xiao Hongling); Wang CM (Wang Cuimei); Wang XL (Wang Xiaoliang) 收藏  |   Influence of AlGaN Buffer Growth Temperature on GaN Epilayer based on Si(111) Substrate 会议论文  OAI收割 3rd international photonics and optoelectronics meetings, wuhan, peoples r china, nov 02-05, 2010 Wei M (Wei Meng); Wang XL (Wang Xiaoliang); Pan X (Pan Xu); Xiao HL (Xiao Hongling); Wang CM (Wang Cuimei); Zhang ML (Zhang Minglan); Wang ZG (Wang Zhanguo) 收藏  |   Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode 会议论文  OAI收割 34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007 Wang, XH; Wang, XL; Xiao, HL; Feng, C; Wang, XY; Wang, BZ; Yang, CB; Wang, JX; Wang, CM; Ran, JX; Hu, GX; Li, JM 收藏  |   AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD 会议论文  OAI收割 34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007 Tang, J; Wang, XL; Xiao, HL; Ran, JX; Wang, CM; Wang, XY; Hu, GX; Li, JM 收藏  |