中国科学院机构知识库网格系统: 检索

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	Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy 期刊论文 OAI收割 Applied Physics Letters, 2020, 卷号: 117, 期号: 5, 页码: 5 作者: Y. Chen,H. Zang,K. Jiang,J. W. Ben,S. L. Zhang,Z. M. Shi,Y. P. Jia,W. Lu,X. J. Sun and D. B. Li \| 收藏 \| 浏览/下载：20/0 \| 提交时间：2021/07/06
	In situ fabrication of Al surface plasmon nanoparticles by metal-organic chemical vapor deposition for enhanced performance of AlGaN deep ultraviolet detectors 期刊论文 OAI收割 Nanoscale Advances, 2020, 卷号: 2, 期号: 5, 页码: 1854-1858 作者: Y. Wu,X. J. Sun,Z. M. Shi,Y. P. Jia,K. Jiang,J. W. Ben,C. H. Kai,Y. Wang,W. Lu and D. B. Li \| 收藏 \| 浏览/下载：5/0 \| 提交时间：2021/07/06
	The formation mechanism of voids in physical vapor deposited AlN epilayer during high temperature annealing 期刊论文 OAI收割 Applied Physics Letters, 2020, 卷号: 116, 期号: 25, 页码: 4 作者: J. W. Ben,Z. M. Shi,H. Zang,X. J. Sun,X. K. Liu,W. Lu and D. B. Li \| 收藏 \| 浏览/下载：18/0 \| 提交时间：2021/07/06
	Polarization-enhanced AlGaN solar-blind ultraviolet detectors 期刊论文 OAI收割 Photonics Research, 2020, 卷号: 8, 期号: 7, 页码: 1243-1252 作者: K. Jiang,X. J. Sun,Z. H. Zhang,J. W. Ben,J. M. Che,Z. M. Shi,Y. P. Jia,Y. Chen,S. L. Zhang,W. Lv and D. B. Li \| 收藏 \| 浏览/下载：16/0 \| 提交时间：2021/07/06
	Suppressing the luminescence of V cation -related point -defect in AlGaN grown by MOCVD on HVPE-AlN 期刊论文 OAI收割 Applied Surface Science, 2020, 卷号: 520, 页码: 9 作者: K. Jiang,X. J. Sun,J. W. Ben,Z. M. Shi,Y. P. Jia,Y. Chen,S. L. Zhang,T. Wu,W. Lu and D. B. Li \| 收藏 \| 浏览/下载：19/0 \| 提交时间：2021/07/06
	Characterization of carrier transport behavior of specific type dislocations in GaN by light assisted KPFM 期刊论文 OAI收割 Journal of Physics D-Applied Physics, 2020, 卷号: 53, 期号: 23, 页码: 6 作者: C. H. Kai,X. J. Sun,Y. P. Jia,K. Jiang,Z. M. Shi,J. W. Ben,Y. Wu,Y. Wang and D. B. Li \| 收藏 \| 浏览/下载：12/0 \| 提交时间：2021/07/06