中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
机构
采集方式
内容类型
发表日期
学科主题
  • 半导体材料 [4]
筛选

浏览/检索结果: 共4条,第1-4条 帮助

限定条件    
条数/页: 排序方式:
Deep-red semiconductor monolithic mode-locked lasers 期刊论文  OAI收割
applied physics letters, 2014, 卷号: 105, 期号: 22, 页码: 221115
Kong, L.; Wang, H. L.; Bajek, D.; White, S. E.; Forrest, A. F.; Wang, X. L.; Cui, B. F.; Pan, J. Q.; Ding, Y.; Cataluna, M. A.
收藏  |  浏览/下载:14/0  |  提交时间:2015/03/19
1.06-μm InGaAs/GaAs multiple-quantum-well optical thyristor lasers with a PiNiN structure. 期刊论文  OAI收割
Optics Letters, 2013, 卷号: 38, 期号: 22, 页码: 4868-4871
Wang H, Mi J, Zhou X, Meriggi L, Steer M, Cui B, Chen W, Pan J, Ding Y.
收藏  |  浏览/下载:15/0  |  提交时间:2014/03/18
Gate controlled Aharonov-Bohm-type oscillations from single neutral excitons in quantum rings 期刊论文  OAI收割
physical review b, 2010, 卷号: 82, 期号: 7, 页码: art. no. 075309
Ding F (Ding F.); Akopian N (Akopian N.); Li B (Li B.); Perinetti U (Perinetti U.); Govorov A (Govorov A.); Peeters FM (Peeters F. M.); Bufon CCB (Bufon C. C. Bof); Deneke C (Deneke C.); Chen YH (Chen Y. H.); Rastelli A (Rastelli A.); Schmidt OG (Schmidt O. G.); Zwiller V (Zwiller V.)
收藏  |  浏览/下载:185/34  |  提交时间:2010/09/07
Microphotoluminescence investigation of InAs quantum dot active region in 1.3 mu m vertical cavity surface emitting laser structure 期刊论文  OAI收割
journal of applied physics, 2010, 卷号: 108, 期号: 7, 页码: art. no. 073111
Ding Y (Ding Y.); Fan WJ (Fan W. J.); Ma BS (Ma B. S.); Xu DW (Xu D. W.); Yoon SF (Yoon S. F.); Liang S (Liang S.); Zhao LJ (Zhao L. J.); Wasiak M (Wasiak M.); Czyszanowski T (Czyszanowski T.); Nakwaski W (Nakwaski W.)
收藏  |  浏览/下载:31/0  |  提交时间:2010/11/14