机构

• 长春光学精密机械与物... [2]
• 高能物理研究所 [2]
• 武汉岩土力学研究所 [1]

采集方式

• OAI收割 [5]

内容类型

• 会议论文 [5]

发表日期

• 2021 [2]
• 2009 [1]
• 2006 [2]

学科主题

筛选

浏览/检索结果: 共5条，第1-5条 帮助 限定条件 内容类型：会议论文     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Progress of Lattice Design and Physics Studies on the High Energy Photon Source 会议论文  OAI收割 Brazil, 2021 作者:  Y. Jiao;  Y. Bai;  X. Cui;  C.C. Du;  Z. Duan   |  收藏  |  浏览/下载：24/0  |  提交时间：2022/01/18 Proposal of the Southern Advanced Photon Source and Current Physics Design Study 会议论文  OAI收割 Brazil, 2021 作者:  S. Wang;  J. Chen;  L. Huang;  Y. Jiao;  B. Li   |  收藏  |  浏览/下载：8/0  |  提交时间：2022/01/18 The Stability Evaluation of the Underground Cavern Group under the High-Rise Building 会议论文  OAI收割 Dalian Univ Technol, OCT 20-22, 2009 作者:  Wu, H. Z.;  Jiao, Y. Y.;  Li, H. B.;  Zhang, X. L.;  Chen, J. F.   |  收藏  |  浏览/下载：12/0  |  提交时间：2018/06/05 3D numerical simulation  finite element method  high-rise building  underground cavern  stability evaluation   Ultraviolet electroluminescence of ZnO based heterojunction light emitting diode 会议论文  OAI收割 2006 Jiao S. J.; Lu Y. M.; Shen D. Z.; Zhang Z. Z.; Li B. H.; Zhang J. Y.; Yao B.; Liu Y. C.; Fan X. W. 收藏  |  浏览/下载：3/0  |  提交时间：2013/03/28 Ultraviolet electroluminescence of ZnO based heterojunction light emitting diode (EI CONFERENCE) 会议论文  OAI收割 12th International Conference on II-VI Compounds, September 12, 2005 - September 16, 2005, Warsaw, Poland Jiao S. J.; Lu Y. M.; Shen D. Z.; Zhang Z. Z.; Li B. H.; Zhang J. Y.; Yao B.; Liu Y. C.; Fan X. W. 收藏  |  浏览/下载：16/0  |  提交时间：2013/03/25 ZnO/GaN p-i-n heterojunctions light emitting diodes were fabricated by plasma-assisted molecular beam epitaxy. We make use of high resistivity of nitrogen doped ZnO to fabricate n-ZnO/i-ZnO/p-GaN heterojunction light emitting diode. The emission of i-ZnO was obtained due to the limitation effect of i-ZnO on electrons and holes. Moreover  n-ZnO/i-MgO/p-GaN heterojunction light emitting diode was also fabricated. The limitation effect on electrons is increased in this heterojunction. The bright ultraviolet electroluminescence at 382 nm originating from the ZnO layer was observed in the room temperature electroluminescence spectrum. We hope to realize the stimulated emission of ZnO using these heterojunctions by the improvement of crystal quality and the optimization of device structure. 2006 WILEY-VCH Verlag GmbH Co. KGaA.