中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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A short-channel SOI RF power LDMOS technology with TiSi2 salicide on dual sidewalls with cutoff frequency f(T) similar to 19.3 GHz 外文期刊  OAI收割
2006
作者:  
Yang, R;  Li, JF;  Qian, H;  Lo, GQ;  Balasubramanian, N
  |  收藏  |  浏览/下载:11/0  |  提交时间:2010/11/26
Effect of the technology of implanting nitrogen into buried oxide on the radiation hardness of the top gate oxide for partially depleted SOIPMOSFET 外文期刊  OAI收割
2005
作者:  
Zheng, ZS;  Liu, ZL;  Zhang, GQ;  Li, N;  Fan, K
  |  收藏  |  浏览/下载:11/0  |  提交时间:2010/11/26
Effects of techniques of implanting nitrogen into buried oxide on the characteristics of partially depleted SOIPMOSFET 外文期刊  OAI收割
2005
作者:  
Zheng, ZS;  Liu, ZL;  Zhang, GQ;  Li, N;  Fan, K
  |  收藏  |  浏览/下载:7/0  |  提交时间:2010/11/26
Improvement of the radiation hardness of SIMOX buried layers using nitrogen implantation 外文期刊  OAI收割
2005
作者:  
Zheng, ZS;  Liu, ZL;  Zhang, GQ;  Li, N;  Li, GH
  |  收藏  |  浏览/下载:14/0  |  提交时间:2010/11/26
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