中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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  • 半导体物理 [2]
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Electron transport properties of In0.53Ga0.47As/In0.52Al0.48As quantum wells with two occupied subbands 期刊论文  OAI收割
acta physica sinica, 2008, 卷号: 57, 期号: 4, 页码: 2481-2485
Li-Yan, S; Tie, L; Wen-Zheng, Z; Zhi-Ming, H; Dong-Lin, L; Hong-Ling, G; Li-Jie, C; Yi-Ping, Z; Shao-Ling, G; Jun-Hao, C
收藏  |  浏览/下载:64/0  |  提交时间:2010/03/08
Observations on subband electron properties in In0.65Ga0.35As/In0.52Al0.48As MM-HEMT with Si delta-doped on the barriers 期刊论文  OAI收割
acta physica sinica, 2007, 卷号: 56, 期号: 7, 页码: 4143-4147
Zhou WZ (Zhou Wen-Zheng); Lin T (Lin Tie); Shang LY (Shang Li-Yan); Huang ZM (Huang Zhi-Ming); Zhu B (Zhu Bo); Cui LJ (Cui Li-Jie); Gao HL (Gao Hong-Ling); Li DL (Li Dong-Lin); Guo SL (Guo Shao-Ling); Gui YS (Gui Yong-Sheng); Chu JH (Chu Jun-Hao)
收藏  |  浏览/下载:138/0  |  提交时间:2010/03/29