中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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  • 半导体研究所 [4]
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Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors 期刊论文  OAI收割
chinese physics b, 2010, 卷号: 19, 期号: 5, 页码: art. no. 057802
Zhao DG (Zhao De-Gang); Zhang S (Zhang Shuang); Liu WB (Liu Wen-Bao); Hao XP (Hao Xiao-Peng); Jiang DS (Jiang De-Sheng); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Wang H (Wang Hui); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui); Wei L (Wei Long)
收藏  |  浏览/下载:73/2  |  提交时间:2010/05/24
Influence of penetrating V-pits on leakage current of GaN based p-i-n UV detector 期刊论文  OAI收割
acta physica sinica, 2009, 卷号: 58, 期号: 11, 页码: 7952-7957
Zhang S (Zhang Shuang); Zhao DG (Zhao De-Gang); Liu ZS (Liu Zong-Shun); Zhu JJ (Zhu Jian-Jun); Zhang SM (Zhang Shu-Ming); Wang YT (Wang Yu-Tian); Duan LH (Duan Li-Hong); Liu WB (Liu Wen-Bao); Jiang DS (Jiang De-Sheng); Yang H (Yang Hui)
收藏  |  浏览/下载:137/40  |  提交时间:2010/03/08
GaN  
Investigation of responsivity decreasing with rising bias voltage in a gan schottky barrier photodetector 期刊论文  iSwitch采集
Semiconductor science and technology, 2008, 卷号: 23, 期号: 10, 页码: 6
作者:  
Zhang, Shuang;  Zhao, D. G.;  Jiang, D. S.;  Liu, W. B.;  Duan, L. H.
收藏  |  浏览/下载:16/0  |  提交时间:2019/05/12
Photoluminescence degradation in GaN induced by light enhanced surface oxidation 期刊论文  OAI收割
journal of applied physics, 2007, 卷号: 102, 期号: 7, 页码: art.no.076112
Liu WB (Liu Wenbao); Sun X (Sun Xian); Zhang S (Zhang Shuang); Chen J (Chen Jun); Wang H (Wang Hui); Wang XL (Wang Xiaolan); Zhao DG (Zhao Degang); Yang H (Yang Hui)
收藏  |  浏览/下载:45/0  |  提交时间:2010/03/29