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CAS IR Grid
机构
长春光学精密机械与物... [5]
生态环境研究中心 [2]
金属研究所 [1]
大连化学物理研究所 [1]
水生生物研究所 [1]
中国科学院大学 [1]
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OAI收割 [11]
iSwitch采集 [1]
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期刊论文 [7]
会议论文 [5]
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材料科学与物理化学 [1]
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The physiological response of Arundo donax and characteristics of anodic bacterial community in BE-CW systems: Effects of the applied voltage
期刊论文
OAI收割
CHEMICAL ENGINEERING JOURNAL, 2020, 卷号: 380, 期号: 1, 页码: 12
作者:
Xiao, Enrong
;
Zhou, Yin
;
Xu, Dan
;
Lu, Rui
  |  
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2020/05/08
Arundo donax
Constructed wetland
Bioelectrochemical
Physiological response
Anodic bacterial community
Applied voltage
Bioelectrochemical enhancement of the anaerobic digestion of thermal-alkaline pretreated sludge in microbial electrolysis cells
期刊论文
OAI收割
RENEWABLE ENERGY, 2018, 卷号: 115, 页码: 1177-1183
作者:
Liu, Junxin
;
Han, Yunping
;
Guo, Xuesong
;
Chen, Xia
;
Xiao, Benyi
  |  
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2019/06/21
Anaerobic digestion
Applied voltage
Bioelectrochemical enhancement
Microbial electrolysis cell
Thermal-alkaline pretreated sludge
Energy recovery evaluation in an up flow microbial electrolysis coupled anaerobic digestion (ME-AD) reactor: Role of electrode positions and hydraulic retention times
期刊论文
OAI收割
APPLIED ENERGY, 2017, 卷号: 206, 期号: 0, 页码: 1214-1224
作者:
Wang, Aijie
;
Liu, Wenzong
;
Gao, Lei
;
Guo, Zechong
;
Sangeetha, Thangavel
  |  
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2018/07/29
Integrated Reactor
Bioelectrochemical System
Hydraulic Retention Time
Electrode Position
Applied Voltage
Microbial Community
Influence of electric parameters on MAO of AZ91D magnesium alloy using alternative square-wave power source
期刊论文
OAI收割
Transactions of Nonferrous Metals Society of China, 2011, 卷号: 21, 期号: 2, 页码: 307-316
L. R. Chang
;
F. H. Cao
;
J. S. Cai
;
W. J. Liu
;
Z. Zhang
;
J. Q. Zhang
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2012/04/13
AZ91D magnesium alloy
micro-arc oxidation (MAO)
alternative
square-wave
duty cycle
applied voltage
frequency
plasma electrolytic oxidation
mg-al alloys
corrosion behavior
anodic
films
coatings
additives
performance
resistance
phase
Electric-field-induced effective anchoring energy in nematic liquid crystal (EI CONFERENCE)
会议论文
OAI收割
2010 International Conference on Display and Photonics, July 12, 2010 - July 13, 2010, Nanjing, China
Ye W.
;
Zhang Z.
;
Xing H.
;
Yang G.
;
Chen G.
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2013/03/25
Electric-field-induced effective anchoring energy in nematic liquid crystal is investigated taking surface and flexoelectric polarization into consideration. The analytical expressions of effective anchoring energy for both bottom and upper substrate
containing these two polarizations
are derived. The effective anchoring strength for both bottom and upper substrate is also obtained by means of a systematic method
which is relevant to magnitude of two polarizations and determined by the applied voltage U. Applying the obtained expressions into an original weak anchoring hybrid aligned nematic cell
the effective anchoring strength are determined with the different magnitudes of two polarizations and the different applied voltage U.
The effect of applied negative bias voltage on the structure of ti-doped a-c : h films deposited by fcva
期刊论文
iSwitch采集
Applied surface science, 2007, 卷号: 253, 期号: 7, 页码: 3722-3726
作者:
Wang, Peng
;
Wang, Xia
;
Chen, Youming
;
Zhang, Guangan
;
Liu, Weimin
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2019/05/10
Hydrogenated amorphous carbon (a-c : h) films
Applied bias voltage
Filtered cathodic vacuum arc (fcva)
The effect of applied negative bias voltage on the structure of Ti-doped a-C:H films deposited by FCVA
期刊论文
OAI收割
Applied Surface Science, 2007, 卷号: 253, 页码: 3722-3726
作者:
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2013/11/01
Hydrogenated amorphous carbon (a-C:H) films
Applied bias voltage
Filtered cathodic vacuum arc (FCVA)
Electrophoresis deposition of carbon nanotubes for triode type CNT-FED cathode (EI CONFERENCE)
会议论文
OAI收割
Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China
作者:
Song H.
;
Jiang H.
;
Li Z.
;
Li Z.
收藏
  |  
浏览/下载:240/0
  |  
提交时间:2013/03/25
This study explores an electrophoretic process to selectively assemble carbon nanotube emitters into normal triode structure for triode type carbon nanotube field emission display cathode. In this process
the carbon nanotubes are migrated and deposited into triode structure by an applied voltage between the gate electrode and cathode electrod. The applied voltage is also used to keep the carbon nanotubes off adsorption on the gate electrode. The experiment results show that the carbon nanotubes are selectively defined inside of gate holes and each hole has the same packing density. The process which is low cost and easily scaling up is an alternative method to prepare triode type carbon nanotube field emission display cathode.
The effect of N/Si ratio on the a-SiiH/SiNx interface of a-SirH/SiNx TFT (EI CONFERENCE)
会议论文
OAI收割
Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China
Liu J. e.
;
Gao W.
;
Liao Y.
;
Jing H.
;
Fu G.
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2013/03/25
The threshold voltage of a-Si: H/SiNx TFT will shift under long time gate bias stress
it is mostly leaded by charge trapping in gate insulator and defect creation in semiconductor. And it is hard to be applied in AMOLED for TFT because of its threshold voltage shift. In allusion to the phenomenon of charge trapping
a series of SiNx insulating films in different N/Si(0. 87 -1.68) ratio were deposited by PECVD in this paper
controlling different flow ratio of source gas SiH4 and NH3
and a great deal of tests (ellipsometer
infrared absorption (FTIR) and Electron Dispersion Spectrum (EDS) test ) were done on these samples. Based on these SiNx insulators
three different capacitance samples in MIS structure were done
degraded experiments and C-V tests on these samples were done. The C-V curve shift of capacitance which contained SiNx with slightly N-rich(N/Si is bigger slightly than 1. 33) was not evident before and after degradation
this result indicated that the defect density of this type SiN x was smaller
and could restrain charge chapping in the interface of a-Si:H/SiNx effectively. So that as gate insulator of TFT
SiN x with slightly N-rich could decrease the threshold voltage shift of TFT and enhance its stability effectively.
Fabrication and electron emission of carbon microtubes (EI CONFERENCE)
会议论文
OAI收割
Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005, July 10, 2005 - July 14, 2005, Oxford, United kingdom
作者:
Liu L.
;
Liu L.
;
Wang W.
;
Wang W.
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2013/03/25
Carbon nanotubes have been attracting attention because of their unique physical properties and their application potential for field emission cathode. Carbon nanotubes possess the following properties favorable for field emission material
such as a high aspect ratio and sharp tip
high chemical stability
high mechanical strength
stable at high temperature. Some research works on carbon nanotubes field emitter and field emission display have been reported. Here
a kind of carbon microtubes and its field emission properties are introduced. They have some different properties with carbon nanotubes
and the density is lower than carbon nanotubes bundles. These carbon microtubes are directly synthesized by liquidoid epitaxy method on silicon substrates at low temperature. The field emission properties of carbon microtubes are reported too. Carbon microtubes film is synthesized in liquid by electrolysis. The graphite plate is as anode
and n-silicon substrate with resistivity of 4-8 cm is as cathode. The electrolysis current is about 5-8mA/cm2
and applied voltage is 800-1500V. Temperatures of the methanol base solution is maintained at 60C in process of deposition of carbon microtubes. Carbon microtubes film is observed by scanning electron microscopy(SEM)
as shown in fig.1(a
b). The wall's thickness of carbon microtube is about 60nm. The diameter of carbon microtube is about 0.8 m. Raman spectrum of carbon microtubes film shows the two peaks at 1342and 1560cm-1. The field emission properties of carbon microtubes are measured in high vacuum chamber(10-5Pa). The emission area of carbon microtubes is 0.5cm 0.5cm. The threshold of field emission of the carbon microtubes film is about 3.6V/ m. Field emission property of carbon microtubes film is shown in fig.2. Another
when the electric field between anode and cathode is 10V/ m
the electric field distribution on single carbon microtube is also given after calculation according to electric field theory. Fig 3 shows that electric field distribution vertical section on the of single carbon microtube top with 2 m of highness. These results may help us to understand field emission properties of carbon microtubes. According to research results
it is found that liquidoid synthesis is simple method to produce carbon microtubes cold cathode material
and the carbon microtubes have better field emission properties. 2005 IEEE.