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	Wiley电子图书及WOL平台检索使用指南演示报告 OAI收割 2014 图书馆收藏 \| 浏览/下载：34/0 \| 提交时间：2014/03/24 Wiley 电子图书 WOL平台检索指南
	Molecular Weight Dependency of Crystallization and Melting Behavior of beta-Nucleated Isotactic Polypropylene 期刊论文 OAI收割 journal of polymer science part b-polymer physics, 2014, 卷号: 52, 期号: 19, 页码: 1301-1308 Lu, Ying; Wang, Qiao; Men, Yongfeng 收藏 \| 浏览/下载：28/0 \| 提交时间：2015/10/19 Compounds of isotactic polypropylene (iPP) and beta-nucleating agent were used to investigate the relationship between the development of beta phase and molecular weight in iPP under quiescent crystallization conditions by using wide angle X-ray diffraction and differential scanning calorimetry techniques. In all cases the dependency of the formation of beta phase in iPP on molecular weight of iPP at a defined crystallization temperature range was found. The iPP with high molecular weight possessed a wide range of crystallization temperature in inducing rich beta phase. However poor or even no beta phase was obtained for the samples with low molecular weight in the same range. In addition an upper critical crystallization temperature of producing dominant beta phase was found at 125 degrees C. Beyond this temperature a phenomenon of prevailing alpha phase became obvious. (C) 2014 Wiley Periodicals Inc.
	A simplified poly(dimethylsiloxane) capillary electrophoresis microchip integrated with a low-noise contactless conductivity detector 期刊论文 OAI收割 ELECTROPHORESIS, 2011, 卷号: 32, 期号: 6-7, 页码: 699-704 Liu,BY; Zhang,Y; Mayer,D; Krause,HJ; Jin,QH; Zhao,JL; Offenhausser,A 收藏 \| 浏览/下载：10/0 \| 提交时间：2012/04/12 WILEY-BLACKWELL
	Signal readout for pyroelectric detector based on relaxor ferroelectric single crystals 期刊论文 OAI收割 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2011, 卷号: 208, 期号: 5, 页码: 1078-1083 Wang, J; Jing, YO; Jing, WP; Li, YJ 收藏 \| 浏览/下载：12/0 \| 提交时间：2012/04/12 WILEY-BLACKWELL
	Time-delay dependent H infinity model simplification for singular systems with Markovian jumping parameters 期刊论文 OAI收割 OPTIMAL CONTROL APPLICATIONS & METHODS, 2011, 卷号: 32, 期号: 4, 页码: 379-395 Lu, HQ; Zhou, WN; Xu, YH; Fang, JA; Tong, DB 收藏 \| 浏览/下载：8/0 \| 提交时间：2012/04/11 WILEY-BLACKWELL
	以读者需求为导向的电子文献资源建设及调整——以中国科学院成都分院WileyInterScience数据库使用为例期刊论文 OAI收割图书馆工作与研究, 2008, 期号: 10, 页码: 41-45 作者: 朱江; 朱江; 朱江; 朱江; 朱江收藏 \| 浏览/下载：11/0 \| 提交时间：2009/03/10 Wiley InterScience数据库数据库使用量读者需求分析文献资源建设与调整
	Raman spectra and phonon modes of MgxZn1-xO alloy films (EI CONFERENCE) 会议论文 OAI收割 12th International Conference on II-VI Compounds, September 12, 2005 - September 16, 2005, Warsaw, Poland Wei Z. P.; Lu Y. M.; Shen D. Z.; Zhang Z. Z.; Wu C. X.; Zhang J. Y.; Yao B.; Fan X. W. 收藏 \| 浏览/下载：13/0 \| 提交时间：2013/03/25 Hexagonal MgxZn1-xO alloy layers with 0 &le 0.3 have been grown by plasma-assisted molecular beam epitaxy on sapphire (006) and Si (111) substrates. Their crystal structures are characterized by x-ray diffraction spectroscopy. The nonresonant and resonant Raman spectra were measured using 488 nm line from Ar+ laser and 325 nm line from He-Cd laser by backscattering geometry. Four Raman modes (E2 high LO TO multiphonon processes) were observed in the nonresonant Raman spectra of hexagonal MgxZn1-xO with different Mg contents. The optical phonon frequencies were found to display one-mode behaviour for all the samples since no separate ZnO- and MgO-like modes were observed. The long-wavelength frequencies of ZnO-like optical phonons measured in the resonant Raman spectra can be expressed as linear functions of x. These behaviours can be explained within a modified random-element-isodisplacement model (MREI). 2006 WILEY-VCH Verlag GmbH Co. KGaA.
	Ultraviolet electroluminescence of ZnO based heterojunction light emitting diode (EI CONFERENCE) 会议论文 OAI收割 12th International Conference on II-VI Compounds, September 12, 2005 - September 16, 2005, Warsaw, Poland Jiao S. J.; Lu Y. M.; Shen D. Z.; Zhang Z. Z.; Li B. H.; Zhang J. Y.; Yao B.; Liu Y. C.; Fan X. W. 收藏 \| 浏览/下载：16/0 \| 提交时间：2013/03/25 ZnO/GaN p-i-n heterojunctions light emitting diodes were fabricated by plasma-assisted molecular beam epitaxy. We make use of high resistivity of nitrogen doped ZnO to fabricate n-ZnO/i-ZnO/p-GaN heterojunction light emitting diode. The emission of i-ZnO was obtained due to the limitation effect of i-ZnO on electrons and holes. Moreover n-ZnO/i-MgO/p-GaN heterojunction light emitting diode was also fabricated. The limitation effect on electrons is increased in this heterojunction. The bright ultraviolet electroluminescence at 382 nm originating from the ZnO layer was observed in the room temperature electroluminescence spectrum. We hope to realize the stimulated emission of ZnO using these heterojunctions by the improvement of crystal quality and the optimization of device structure. 2006 WILEY-VCH Verlag GmbH Co. KGaA.