Fabrication of SWCNT-Graphene Field-Effect Transistors
文献类型：期刊论文
| 作者 | Xie SX(解双喜); Jiao ND(焦念东) ; Tung, Steve; Liu LQ(刘连庆)
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| 刊名 | MICROMACHINES
 |
| 出版日期 | 2015 |
| 卷号 | 6期号:9页码:1317-1330 |
| 关键词 | graphene SWCNT all-carbon FETs dielectrophoresis AFM interdigitated electrodes |
| ISSN号 | 2072-666X |
| 产权排序 | 1 |
| 通讯作者 | Tung, Steve ; 刘连庆 |
| 中文摘要 | Graphene and single-walled carbon nanotube (SWCNT) have been widely studied because of their extraordinary electrical, thermal, mechanical, and optical properties. This paper describes a novel and flexible method to fabricate all-carbon field-effect transistors (FETs). The fabrication process begins with assembling graphene grown by chemical vapor deposition (CVD) on a silicon chip with SiO2 as the dielectric layer and n-doped Si substrate as the gate. Next, an atomic force microscopy (AFM)-based mechanical cutting method is utilized to cut the graphene into interdigitated electrodes with nanogaps, which serve as the source and drain. Lastly, SWCNTs are assembled on the graphene interdigitated electrodes by dielectrophoresis to form the conductive channel. The electrical properties of the thus-fabricated SWCNT-graphene FETs are investigated and their FET behavior is confirmed. The current method effectively integrates SWCNTs and graphene in nanoelectronic devices, and presents a new method to build all-carbon electronic devices. |
| WOS标题词 | Science & Technology ; Technology |
| 类目[WOS] | Nanoscience & Nanotechnology ; Instruments & Instrumentation |
| 研究领域[WOS] | Science & Technology - Other Topics ; Instruments & Instrumentation |
| 关键词[WOS] | CARBON NANOTUBES ; WORK FUNCTION ; SEMICONDUCTORS |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000362547000007 |
| 源URL | [http://ir.sia.cn/handle/173321/17174]  |
| 专题 | 沈阳自动化研究所_机器人学研究室 |
| 推荐引用方式 GB/T 7714 | Xie SX,Jiao ND,Tung, Steve,et al. Fabrication of SWCNT-Graphene Field-Effect Transistors[J]. MICROMACHINES,2015,6(9):1317-1330. |
| APA | Xie SX,Jiao ND,Tung, Steve,&Liu LQ.(2015).Fabrication of SWCNT-Graphene Field-Effect Transistors.MICROMACHINES,6(9),1317-1330. |
| MLA | Xie SX,et al."Fabrication of SWCNT-Graphene Field-Effect Transistors".MICROMACHINES 6.9(2015):1317-1330. |
入库方式： OAI收割
来源：沈阳自动化研究所
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