中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Fabrication of SWCNT-Graphene Field-Effect Transistors

文献类型:期刊论文

作者Xie SX(解双喜); Jiao ND(焦念东); Tung, Steve; Liu LQ(刘连庆)
刊名MICROMACHINES
出版日期2015
卷号6期号:9页码:1317-1330
关键词graphene SWCNT all-carbon FETs dielectrophoresis AFM interdigitated electrodes
ISSN号2072-666X
产权排序1
通讯作者Tung, Steve ; 刘连庆
中文摘要Graphene and single-walled carbon nanotube (SWCNT) have been widely studied because of their extraordinary electrical, thermal, mechanical, and optical properties. This paper describes a novel and flexible method to fabricate all-carbon field-effect transistors (FETs). The fabrication process begins with assembling graphene grown by chemical vapor deposition (CVD) on a silicon chip with SiO2 as the dielectric layer and n-doped Si substrate as the gate. Next, an atomic force microscopy (AFM)-based mechanical cutting method is utilized to cut the graphene into interdigitated electrodes with nanogaps, which serve as the source and drain. Lastly, SWCNTs are assembled on the graphene interdigitated electrodes by dielectrophoresis to form the conductive channel. The electrical properties of the thus-fabricated SWCNT-graphene FETs are investigated and their FET behavior is confirmed. The current method effectively integrates SWCNTs and graphene in nanoelectronic devices, and presents a new method to build all-carbon electronic devices.
WOS标题词Science & Technology ; Technology
类目[WOS]Nanoscience & Nanotechnology ; Instruments & Instrumentation
研究领域[WOS]Science & Technology - Other Topics ; Instruments & Instrumentation
关键词[WOS]CARBON NANOTUBES ; WORK FUNCTION ; SEMICONDUCTORS
收录类别SCI ; EI
语种英语
WOS记录号WOS:000362547000007
源URL[http://ir.sia.cn/handle/173321/17174]  
专题沈阳自动化研究所_机器人学研究室
推荐引用方式
GB/T 7714
Xie SX,Jiao ND,Tung, Steve,et al. Fabrication of SWCNT-Graphene Field-Effect Transistors[J]. MICROMACHINES,2015,6(9):1317-1330.
APA Xie SX,Jiao ND,Tung, Steve,&Liu LQ.(2015).Fabrication of SWCNT-Graphene Field-Effect Transistors.MICROMACHINES,6(9),1317-1330.
MLA Xie SX,et al."Fabrication of SWCNT-Graphene Field-Effect Transistors".MICROMACHINES 6.9(2015):1317-1330.

入库方式: OAI收割

来源:沈阳自动化研究所

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