中国科学院机构知识库网格系统: First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2)

First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2)

文献类型：期刊论文


作者	Li, Z ; Dezilllie, B ; Eremin, V ; Li, CJ ; Verbitskaya, E
刊名	Nuclear instruments & methods in physics research section a-accelerators spectrometers detectors and associated equipment
出版日期	1999-04-21
卷号	426 期号:1 页码:38-46
关键词	Strip detectors Silicon detectors Annealing Simulation Irradiation
ISSN号	0168-9002
通讯作者	Li, z()
英文摘要	Test strip detectors of 125 mu m, 500 mu m, and 1 mm pitches with about 1 cm(2) areas have been made on medium-resistivity silicon wafers (1.3 and 2.7 k ohm cm). detectors of 500 mu m pitch have been tested for charge collection and position precision before and after neutron irradiation (up to 2 x 10(14) n/cm(2)) using 820 and 1030 nm laser lights with different beam-spot sizes. it has been found that for a bias of 250 v a strip detector made of 1.3 k ohm cm (300 mu m thick) can be fully depleted before and after an irradiation of 2 x 10(14) n/cm(2). for a 500 mu m pitch strip detector made of 2.7 k ohm cm tested with an 1030 nm laser light with 200 mu m spot size, the position reconstruction error is about 14 mu m before irradiation, and 17 mu m after about 1.7 x 10(13) n/cm(2) irradiation. we demonstrated in this work that medium resistivity silicon strip detectors can work just as well as the traditional high-resistivity ones, but with higher radiation tolerance. we also tested charge sharing and position reconstruction using a 1030 nm wavelength (300 mu m absorption length in si at rt) laser, which provides a simulation of mip particles in high-physics experiments in terms of charge collection and position reconstruction, (c) 1999 elsevier science b.v. all rights reserved.
WOS关键词	N-EFF ; JUNCTION DETECTORS ; RADIATION-DAMAGE ; MODELS
WOS研究方向	Instruments & Instrumentation ; Nuclear Science & Technology ; Physics ; Spectroscopy
WOS类目	Instruments & Instrumentation ; Nuclear Science & Technology ; Physics, Particles & Fields ; Spectroscopy
语种	英语
WOS记录号	WOS:000079966600007
出版者	ELSEVIER SCIENCE BV
URI标识	http://www.irgrid.ac.cn/handle/1471x/2428713
专题	半导体研究所
通讯作者	Li, Z
作者单位	1.Brookhaven Natl Lab, Upton, NY 11973 USA 2.RAS, AF Ioffe Physicotech Inst, St Petersburg, Russia 3.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Li, Z,Dezilllie, B,Eremin, V,et al. First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2)[J]. Nuclear instruments & methods in physics research section a-accelerators spectrometers detectors and associated equipment,1999,426(1):38-46.
APA	Li, Z,Dezilllie, B,Eremin, V,Li, CJ,&Verbitskaya, E.(1999).First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2).Nuclear instruments & methods in physics research section a-accelerators spectrometers detectors and associated equipment,426(1),38-46.
MLA	Li, Z,et al."First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2)".Nuclear instruments & methods in physics research section a-accelerators spectrometers detectors and associated equipment 426.1(1999):38-46.

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First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2)

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