Reduction of NiGe/n-and p-Ge Specific Contact Resistivity by Enhanced Dopant Segregation in the Presence of Carbon During Nickel Germanidation
文献类型：期刊论文
| 作者 | Duan NY(段宁远); Wang GL(王桂磊) ; Liu JB(刘金彪); Eddy simoen; Mao SJ(毛淑娟); Henry Homayoun Radamson; Wang XL(王晓磊); Li JF(李俊峰); Wang WW(王文武); Zhao C(赵超)
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| 刊名 | IEEE Transactions on Electron Devices
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| 出版日期 | 2016-11-01 |
| 文献子类 | 期刊论文 |
| 源URL | [http://159.226.55.106/handle/172511/16192]  |
| 专题 | 微电子研究所_集成电路先导工艺研发中心 |
| 作者单位 | 中国科学院微电子研究所 |
| 推荐引用方式 GB/T 7714 | Duan NY,Wang GL,Liu JB,et al. Reduction of NiGe/n-and p-Ge Specific Contact Resistivity by Enhanced Dopant Segregation in the Presence of Carbon During Nickel Germanidation[J]. IEEE Transactions on Electron Devices,2016. |
| APA | Duan NY.,Wang GL.,Liu JB.,Eddy simoen.,Mao SJ.,...&Zhao C.(2016).Reduction of NiGe/n-and p-Ge Specific Contact Resistivity by Enhanced Dopant Segregation in the Presence of Carbon During Nickel Germanidation.IEEE Transactions on Electron Devices. |
| MLA | Duan NY,et al."Reduction of NiGe/n-and p-Ge Specific Contact Resistivity by Enhanced Dopant Segregation in the Presence of Carbon During Nickel Germanidation".IEEE Transactions on Electron Devices (2016). |
入库方式： OAI收割
来源：微电子研究所
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