On the manifestation ofGe Pre-amorphization Implantation (PAI) in forming ultrathin TiSix for Ti direct contact on Si in sub-16/14 nm Complementary Metal-Oxide-Semiconductor (CMOS) technology nodes
文献类型：期刊论文
| 作者 | Wang GL(王桂磊) ; Li JF(李俊峰); Zhao C(赵超); Ye TC(叶甜春); Chen DP(陈大鹏); Wang WW(王文武); Henry Homayoun Radamson; Eddy Simoen; Duan NY(段宁远); Luo J(罗军)
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| 刊名 | ECS Journal of Solid State Science and Technology
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| 出版日期 | 2017-08-17 |
| 文献子类 | 期刊论文 |
| 源URL | [http://159.226.55.106/handle/172511/18093]  |
| 专题 | 微电子研究所_集成电路先导工艺研发中心 |
| 作者单位 | 中国科学院微电子研究所 |
| 推荐引用方式 GB/T 7714 | Wang GL,Li JF,Zhao C,et al. On the manifestation ofGe Pre-amorphization Implantation (PAI) in forming ultrathin TiSix for Ti direct contact on Si in sub-16/14 nm Complementary Metal-Oxide-Semiconductor (CMOS) technology nodes[J]. ECS Journal of Solid State Science and Technology,2017. |
| APA | Wang GL.,Li JF.,Zhao C.,Ye TC.,Chen DP.,...&Xu J.(2017).On the manifestation ofGe Pre-amorphization Implantation (PAI) in forming ultrathin TiSix for Ti direct contact on Si in sub-16/14 nm Complementary Metal-Oxide-Semiconductor (CMOS) technology nodes.ECS Journal of Solid State Science and Technology. |
| MLA | Wang GL,et al."On the manifestation ofGe Pre-amorphization Implantation (PAI) in forming ultrathin TiSix for Ti direct contact on Si in sub-16/14 nm Complementary Metal-Oxide-Semiconductor (CMOS) technology nodes".ECS Journal of Solid State Science and Technology (2017). |
入库方式： OAI收割
来源：微电子研究所
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