中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Nanochannels on silicon oxide surface fabricated by atomic force microscopy

文献类型:会议论文

作者Wang ZQ(王志迁); Tung, Steve; Jiao ND(焦念东); Dong ZL(董再励)
出版日期2010
会议名称5th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010
会议日期January 20-23, 2010
会议地点Xiamen, China
关键词Atomic force microscopy Nanolithography NEMS Silica Silicon oxides
页码637-640
中文摘要An experimental study was conducted to investigate the feasibility of fabricating relatively long nanochannels on hard and brittle silicon dioxide surface using atomic force microscopy (AFM) based lithography. Specifically, the relationship between the applied AFM tip force and the resultant nanochannel depth was measured and analyzed. The nanochannels were fabricated by two different AFM lithographic methods. In the first method, a constant tip force was applied and the maximum channel depth achievable was about 15nm. In the second method, a gradually increasing tip force was used and a much larger channel depth of 28nm was achieved. The average depth along the entire channel length was about 15nm. Based on the current results, it can be concluded that AFM based lithography is a viable nanomachining technique for realizing long nanochannels on silicon based substrates. 
收录类别EI
产权排序1
会议录2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010
会议录出版者IEEE Computer Society
会议录出版地Piscataway, NJ
语种英语
ISBN号978-1-4244-6543-9
源URL[http://ir.sia.cn/handle/173321/8799]  
专题沈阳自动化研究所_机器人学研究室
推荐引用方式
GB/T 7714
Wang ZQ,Tung, Steve,Jiao ND,et al. Nanochannels on silicon oxide surface fabricated by atomic force microscopy[C]. 见:5th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010. Xiamen, China. January 20-23, 2010.

入库方式: OAI收割

来源:沈阳自动化研究所

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