中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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  • OAI收割 [6]
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发表日期
  • 2009 [6]
学科主题
  • 半导体材料 [6]
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Influence of implantation energy on the characteristics of Mn-implanted nonpolar a-plane GaN films 期刊论文  OAI收割
materials letters, 2009, 卷号: 63, 期号: 3-4, 页码: 451-453
Sun LL; Yan FW; Wang JX; Zhang HX; Zeng YP; Wang GH; Li JM
收藏  |  浏览/下载:255/68  |  提交时间:2010/03/08
The structural, morphological and magnetic characteristics of Mn-implanted nonpolar a-plane GaN films 期刊论文  OAI收割
physica status solidi a-applications and materials science, 2009, 卷号: 206, 期号: 1, 页码: 91-93
Sun LL; Yan FW; Wang JX; Zeng YP; Wang GH; Li JM
收藏  |  浏览/下载:219/46  |  提交时间:2010/03/08
The field emission properties of nonpolar a-plane n-type GaN films grown on nano-patterned sapphire substrates 期刊论文  OAI收割
physica status solidi a-applications and materials science, 2009, 卷号: 206, 期号: 7, 页码: 1501-1503
Sun LL; Yan FW; Wang JX; Zhang HX; Zeng YP; Wang GH; Li JM
收藏  |  浏览/下载:55/1  |  提交时间:2010/03/08
Boron-doped silicon film as a recombination layer in the tunnel junction of a tandem solar cell 期刊论文  OAI收割
半导体学报, 2009, 卷号: 30, 期号: 6, 页码: 25-28
作者:  
Liu Shiyong;  Peng Wenbo
收藏  |  浏览/下载:13/0  |  提交时间:2010/11/23
An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application 期刊论文  OAI收割
solid-state electronics, 2009, 卷号: 53, 期号: 3, 页码: 332-335
作者:  
Zhang ML;  Hou QF
收藏  |  浏览/下载:129/30  |  提交时间:2010/03/08
The impact of implantation dose on the characteristics of diluted-magnetic nonpolar GaN:Cu films 期刊论文  OAI收割
materials letters, 2009, 卷号: 63, 期号: 29, 页码: 2574-2576
Sun, LL (Sun, Lili); Yan, FW (Yan, Fawang); Zhang, HX (Zhang, Huixiao); Wang, JX (Wang, Junxi); Zeng, YP (Zeng, Yiping); Wang, GH (Wang, Guohong); Li, JM (Li, Jinmin)
收藏  |  浏览/下载:170/32  |  提交时间:2010/03/08