中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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  • OAI收割 [2]
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  • 2017 [2]
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Investigation on direct-gap GeSn alloys for high-performance tunneling field-effect transistor applications 期刊论文  OAI收割
Electron Devices Technology and Manufacturing Conference, 2017
作者:  
Liu L(刘磊);  Wang GL(王桂磊);  Henry Homayoun Radamson
  |  收藏  |  浏览/下载:6/0  |  提交时间:2018/07/05
Theoretical study of the effect of different n-doping elements on band structure and optical gain of GeSn alloys 期刊论文  OAI收割
Phys. Chem. Chem. Phys., 2017, 卷号: 19, 页码: 27031--27037
作者:  
Wenqi Huang;  Hong Yang;  Buwen Cheng;  Chunlai Xue
收藏  |  浏览/下载:17/0  |  提交时间:2018/07/02