机构

• 半导体研究所 [2]

采集方式

• OAI收割 [2]

内容类型

• 会议论文 [2]

发表日期

• 2006 [2]

学科主题

• 半导体材料 [2]

筛选

浏览/检索结果: 共2条，第1-2条 帮助 限定条件 发表日期：2006    学科主题：半导体材料    内容类型：会议论文     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序作者升序作者降序发表日期升序发表日期降序 Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition 会议论文  OAI收割 international conference on silicon carbide and related materials (icscrm 2005), pittsburgh, pa, sep 18-23, 2005 Sun, GS (Sun, Guosheng); Ning, J (Ning, Jin); Gong, QC (Gong, Quancheng); Gao, X (Gao, Xin); Wang, L (Wang, Lei); Liu, XF (Liu, Xingfang); Zeng, YP (Zeng, Yiping); Li, JM (Li, Jinmin) 收藏  |  浏览/下载：100/29  |  提交时间：2010/03/29 homoepitaxial growth  low-pressure hot-wall CVD  structural and optical characteristics  intentional doping  Schottky barrier diodes   The study of high temperature annealing of a-SiC : H films 会议论文  OAI收割 3rd international materials symposium/12th meeting of the sociedad-portuguesa-da-materials (materials 2005/spm), aveiro, portugal, mar 20-23, 2005 Zhang, S; Hu, Z; Raniero, L; Liao, X; Ferreira, I; Fortunato, E; Vilarinho, P; Perreira, L; Martins, R 收藏  |  浏览/下载：209/71  |  提交时间：2010/03/29 silicon carbide  high temperature annealing  thin film  SILICON  PECVD