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Chinese Academy of Sciences Institutional Repositories Grid
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  • 2011 [7]
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  • 半导体物理 [7]
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浏览/检索结果: 共7条，第1-7条 帮助

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Native p-type transparent conductive CuI via intrinsic defects 期刊论文  OAI收割
journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2011, 2011, 卷号: 110, 110, 期号: 5, 页码: 54907, 54907
作者:  Wang J;  Li JB;  Li SS;  Li, JB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China, jbli@semi.ac.cn
  |  收藏  |  浏览/下载：35/0  |  提交时间：2012/01/06
Surface alloy formation of noble adatoms adsorbed on Si(111)-root 3 x root 3-Pb surface: a first-principles study 期刊论文  OAI收割
journal of physics-condensed matter, JOURNAL OF PHYSICS-CONDENSED MATTER, 2011, 2011, 卷号: 23, 23, 期号: 26, 页码: art. no. 265001, Art. No. 265001
作者:  Li C;  Wang F;  Sun Q;  Jia Y
  |  收藏  |  浏览/下载：89/7  |  提交时间：2011/07/07
First principles study of p-type doping in SiC nanowires: role of quantum effect 期刊论文  OAI收割
journal of nanoparticle research, JOURNAL OF NANOPARTICLE RESEARCH, 2011, 2011, 卷号: 13, 13, 期号: 7, 页码: 2887-2892, 2887-2892
作者:  Wang ZG;  Xue SW;  Li JB;  Gao F
  |  收藏  |  浏览/下载：45/4  |  提交时间：2011/07/07
First principles study of the electronic properties of twinned SiC nanowires 期刊论文  OAI收割
journal of nanoparticle research, JOURNAL OF NANOPARTICLE RESEARCH, 2011, 2011, 卷号: 13, 13, 期号: 1, 页码: 185-191, 185-191
作者:  Wang ZG;  Wang SJ;  Zhang CL;  Li JB;  Wang, ZG, Univ Elect Sci & Technol China. , Dept Appl Phys, Chengdu 610054, Peoples R China. zgwang@uestc.edu.cn
  |  收藏  |  浏览/下载：100/6  |  提交时间：2011/07/05
Magnetic coupling properties of Mn-doped AlN nanowires: First-principles calculations 期刊论文  OAI收割
physics letters a, PHYSICS LETTERS A, 2011, 2011, 卷号: 375, 375, 期号: 15, 页码: 1686-1689, 1686-1689
作者:  Zhang YJ;  Shi HL;  Li RW;  Zhang P;  Zhang, P, LCP Inst Appl Phys & Computat Math, POB 8009, Beijing 100088, Peoples R China. zhang_ping@iapcm.ac.cn
  |  收藏  |  浏览/下载：43/7  |  提交时间：2011/07/05
First principle study of the thermal conductance in graphene nanoribbon with vacancy and substitutional silicon defects 期刊论文  OAI收割
applied physics letters, APPLIED PHYSICS LETTERS, 2011, 2011, 卷号: 98, 98, 期号: 11, 页码: article no.113114, Article no.113114
作者:  Jiang JW;  Wang BS;  Wang JS;  Jiang, JW, Natl Univ Singapore, Dept Phys, Singapore 117542, Singaporephyjj@nus.edu.sg
  |  收藏  |  浏览/下载：52/4  |  提交时间：2011/07/05
Adsorption and diffusion of H(2)O molecule on the Be(0001) surface: A density-functional theory study 期刊论文  OAI收割
physics letters a, PHYSICS LETTERS A, 2011, 2011, 卷号: 375, 375, 期号: 36, 页码: 3208-3212, 3208-3212
作者:  Wang SX;  Zhang P;  Zhao J;  Li SS;  Zhang, PZhang, P (reprint author), Inst Appl Phys & Computat Math, LCP, POB 8009, Beijing 100088, Peoples R China. zhang_ping@iapcm.ac.cn
  |  收藏  |  浏览/下载：22/0  |  提交时间：2011/09/14
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