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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
新疆理化技术研究所 [5]
采集方式
OAI收割 [5]
内容类型
期刊论文 [5]
发表日期
2020 [5]
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发表日期:2020
专题:新疆理化技术研究所
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Displacement damage effects induced by fast neutron in backside-illuminated CMOS image sensors
期刊论文
OAI收割
JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY, 2020, 卷号: 57, 期号: 9, 页码: 1015-1021
作者:
Zhang, X (Zhang, Xiang)[ 1,2,3 ]
;
Li, YD (Li, Yudong)[ 1,2 ]
;
Wen, L (Wen, Lin)[ 1,2 ]
;
Feng, J (Feng, Jie)[ 1,2 ]
;
Zhou, D (Zhou, Dong)[ 1,2 ]
  |  
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2020/12/09
14-MeV neutron
neutron irradiation
radiation damage
radiation effect
Optoelectronic Performance Analysis of Low-Energy Proton Irradiation and Post-Thermal Annealing Effects on InGaAs Solar Cell
期刊论文
OAI收割
FRONTIERS IN PHYSICS, 2020, 卷号: 8, 期号: 11, 页码: 1-7
作者:
Zhuang, Y (Zhuang, Y.)[ 1 ]
;
Aierken, A (Aierken, A.)[ 1 ]
;
Lei, QQ (Lei, Q. Q.)[ 2,3 ]
;
Fang, L (Fang, L.)[ 4 ]
;
Shen, XB (Shen, X. B.)[ 2,3 ]
  |  
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2021/01/05
InGaAs solar cell
proton irradiation
displacement damage
degradation
annealing
Degradation characteristics of electron and proton irradiated InGaAsP/InGaAs dual junction solar cell
期刊论文
OAI收割
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2020, 卷号: 206, 期号: 3, 页码: 1-7
作者:
Zhao, XF (Zhao, X. F.)[ 1 ]
;
Aierken, A (Aierken, A.)[ 1,2 ]
;
Heini, M (Heini, M.)[ 1,3 ]
  |  
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2020/04/21
InGaAsP/InGaAs solar cell
Electron and proton irradiation
Degradation
Equivalent displacement damage dose model
A study of hot pixels induced by proton and neutron irradiations in charge coupled devices
期刊论文
OAI收割
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2020, 卷号: 175, 期号: 5-6, 页码: 540-550
作者:
Liu, BK (Liu, Bingkai)[ 1,2,3 ]
;
Li, YD (Li, Yudong)[ 1,2 ]
;
Wen, L (Wen, Lin)[ 1,2 ]
;
Zhou, D (Zhou, Dong)[ 1,2 ]
;
Feng, J (Feng, Jie)[ 1,2 ]
  |  
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2020/07/06
Charge coupled devices (CCDs)
proton irradiation
neutron irradiation
hot pixels
displacement damage effects
The influence of channel width on total ionizing dose responses of the 130 nm H-gate partially depleted SOI NMOSFETs
期刊论文
OAI收割
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2020, 卷号: 175, 期号: 5-6, 页码: 551-558
作者:
Xi, SX (Xi, Shan-Xue)[ 1,2,3 ]
;
Zheng, QW (Zheng, Qi-Wen)[ 1,2 ]
;
Lu, W (Lu, Wu)[ 1,2 ]
;
Cui, JW (Cui, Jiang-Wei)[ 1,2 ]
;
Wei, Y (Wei, Ying)[ 1,2 ]
  |  
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2020/07/06
Total ionizing dose
h-shape gate
channel width
partially depleted