中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
机构
  • 半导体研究所 [6]
采集方式
内容类型
发表日期
学科主题
  • 半导体器件 [6]
筛选

浏览/检索结果: 共6条,第1-6条 帮助

限定条件                    
条数/页: 排序方式:
Low-temperature electron mobility in heavily n-doped junctionless nanowire 期刊论文  OAI收割
applied physics letters, 2013, 卷号: 102, 期号: 22, 页码: 223507
Xiaoming Li, Weihua Han, Liuhong Ma, Hao Wang, Fuhua Yang
收藏  |  浏览/下载:19/0  |  提交时间:2014/03/26
Limiting factors of driving hall element by pulsed power supply 期刊论文  OAI收割
key engineering materials, 2011, 卷号: 480-481, 页码: 786-789
Chen, Xuelei
收藏  |  浏览/下载:39/0  |  提交时间:2012/06/14
Behavior of Pentacene Initial Nucleation on Various Dielectrics and Its Effect on Carrier Transport in Organic Field-Effect Transistor 期刊论文  OAI收割
journal of nanoscience and nanotechnology, 2010, 卷号: 10, 期号: 11 sp. iss. si, 页码: 7103-7107
Qi QO (Qi Qiong); Yu AF (Yu Aifang); Wang LM (Wang Liangmin); Jiang C (Jiang Chao)
收藏  |  浏览/下载:28/0  |  提交时间:2010/11/30
Hydrogen sensors based on AlGaN/AIN/GaN HEMT 期刊论文  OAI收割
microelectronics journal, 2008, 卷号: 39, 期号: 1, 页码: 20-23
Wang, XH; Wang, XL; Feng, C; Yang, CB; Wang, BZ; Ran, JX; Xiao, HL; Wang, CM; Wang, JX
收藏  |  浏览/下载:51/6  |  提交时间:2010/03/08
Hydrogen sensors based on AlGaN/AIN/GaN Schottky diodes 期刊论文  OAI收割
chinese physics letters, 2008, 卷号: 25, 期号: 1, 页码: 266-269
Wang, XH; Wang, XL; Feng, C; Xiao, HL; Yang, CB; Wang, JX; Wang, BZ; Ran, JX; Wang, CM
收藏  |  浏览/下载:74/8  |  提交时间:2010/03/08
Back-to-back Schottky diode adopted for the measurement of GaN films and its Schottky contacts 期刊论文  OAI收割
semiconductor science and technology, 2005, 卷号: 20, 期号: 6, 页码: 606-610
Luo Q; Du JF; Yang MH; Wang LC; Jin T; Yu Q
收藏  |  浏览/下载:55/14  |  提交时间:2010/03/17