机构

• 半导体研究所 [9]

采集方式

• OAI收割 [9]

内容类型

• 期刊论文 [9]

发表日期

• 2012 [1]
• 2011 [2]
• 2010 [1]
• 1995 [2]
• 1991 [1]
• 1989 [1]
• 更多

学科主题

• 半导体器件 [9]

筛选

浏览/检索结果: 共9条，第1-9条 帮助 限定条件 学科主题：半导体器件    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序作者升序作者降序发表日期升序发表日期降序 Anomalous temperature dependence of photoluminescence in self-assembled InGaN quantum dots 期刊论文  OAI收割 applied physics letters, APPLIED PHYSICS LETTERS, 2012, 2012, 卷号: 101, 101, 期号: 13, 页码: 131101, 131101 作者:  Ma J (Ma, Jun);  Ji XL (Ji, Xiaoli);  Wang GH (Wang, Guohong);  Wei XC (Wei, Xuecheng);  Lu HX (Lu, Hongxi)   |  收藏  |  浏览/下载：22/0  |  提交时间：2013/03/27 Comprehensive thermal characterization using ruby R fluorescence lines of sapphire and GaNE(2)-high Raman mode from Raman spectra in high-power flip-chip InGaN/GaN LEDs 期刊论文  OAI收割 journal of physics d-applied physics, 2011, 卷号: 44, 期号: 35, 页码: 355101 Cui M; Zhou TF; Wang MR; Huang J; Huang HJ; Zhang JP; Xu K; Yang H 收藏  |  浏览/下载：28/0  |  提交时间：2012/02/06 LIGHT-EMITTING-DIODES  TEMPERATURE-MEASUREMENTS  GAN  SCATTERING  DEPENDENCE  JUNCTION  PHONONS  ALN   High power, high energy nanosecond pulsed fiber amplifier with a 20-mu m-core fiber 期刊论文  OAI收割 laser physics, LASER PHYSICS, 2011, 2011, 卷号: 21, 21, 期号: 3, 页码: 536-539, 536-539 作者:  Dong ZY;  Zou SZ;  Han ZH;  Yu HJ;  Sun L   |  收藏  |  浏览/下载：60/6  |  提交时间：2011/07/06 TEMPERATURE-DEPENDENCE  BEAM QUALITY  LASER  FREQUENCY  Temperature-dependence  Beam Quality  Laser  Frequency   High Characteristic Temperature InGaAsP/InP Tunnel Injection Multiple-Quantum-Well Lasers 期刊论文  OAI收割 chinese physics letters, 2010, 卷号: 27, 期号: 11, 页码: art. no. 114201 Wang Y (Wang Yang); Qiu YP (Qiu Ying-Ping); Pan JQ (Pan Jiao-Qing); Zhao LJ (Zhao Ling-Juan); Zhu HL (Zhu Hong-Liang); Wang W (Wang Wei) 收藏  |  浏览/下载：23/0  |  提交时间：2010/12/05 AUGER RECOMBINATION  THRESHOLD CURRENT  DEPENDENCE  DEVICE   DEVELOPMENT OF CURRENT-BASED MICROSCOPIC DEFECT ANALYSIS-METHODS AND ASSOCIATED OPTICAL FILLING TECHNIQUES FOR THE INVESTIGATION ON HIGHLY IRRADIATED HIGH-RESISTIVITY SILICON DETECTORS 期刊论文  OAI收割 nuclear instruments & methods in physics research section a-accelerators spectrometers detectors and associated equipment, 1995, 卷号: 364, 期号: 1, 页码: 108-117 LI CJ; LI Z 收藏  |  浏览/下载：13/0  |  提交时间：2010/11/17 LEVEL TRANSIENT SPECTROSCOPY  NEUTRON  RADIATION  TRAPS   STUDY OF THE LONG-TERM STABILITY OF THE EFFECTIVE CONCENTRATION OF IONIZED SPACE CHARGES (N-EFF) OF NEUTRON-IRRADIATED SILICON DETECTORS FABRICATED BY VARIOUS THERMAL-OXIDATION PROCESSES 期刊论文  OAI收割 ieee transactions on nuclear science, 1995, 卷号: 42, 期号: 4, 页码: 219-223 LI Z; CHEN W; DOU L; EREMIN V; KRANER HW; LI CJ; LINDSTROEM G; SPIRITI E 收藏  |  浏览/下载：5/0  |  提交时间：2010/11/17 RADIATION-DAMAGE   GAAS/GAALAS GRADED INDEX SEPARATE CONFINEMENT SINGLE QUANTUM-WELL SINGLE-MODE WAVE-GUIDE ELECTROABSORPTION LIGHT-MODULATOR 期刊论文  OAI收割 iee proceedings-j optoelectronics, 1991, 卷号: 138, 期号: 5, 页码: 313-318 ZHU LD; XIONG FK; WANG CM; CHEN ZH; HSIE YL; FEAK GAB; BALLANTYNE JM 收藏  |  浏览/下载：7/0  |  提交时间：2010/11/15 GAALAS SEMICONDUCTOR-LASERS  OPTICAL MODULATION  ULTIMATE LIMIT  ABSORPTION  HETEROSTRUCTURE  DEPENDENCE  DIODE   TEMPERATURE-DEPENDENCE OF OPTICAL GAIN, QUANTUM EFFICIENCY, AND THRESHOLD CURRENT IN GAAS/GAALAS GRADED-INDEX SEPARATE-CONFINEMENT HETEROSTRUCTURE SINGLE-QUANTUM-WELL LASERS 期刊论文  OAI收割 ieee journal of quantum electronics, 1989, 卷号: 25, 期号: 9, 页码: 2007-2012 ZHU LD; ZHENG BZ; FEAK GAB 收藏  |  浏览/下载：10/0  |  提交时间：2010/11/15 TEMPERATURE-DEPENDENCE OF BISTABLE INGAASP/INP LASERS 期刊论文  OAI收割 ieee journal of quantum electronics, 1986, 卷号: 22, 期号: 9, 页码: 1579-1586 LIU HF; KAMIYA T; DU BX 收藏  |  浏览/下载：12/0  |  提交时间：2010/11/15