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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [31]
采集方式
OAI收割 [31]
内容类型
期刊论文 [30]
会议论文 [1]
发表日期
2011 [1]
2009 [1]
2008 [5]
2006 [4]
2005 [1]
2004 [1]
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学科主题
半导体物理 [31]
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Study on Optical Properties of Type-II SnO2/ZnS Core/Shell Nanowires
期刊论文
OAI收割
journal of physical chemistry c, JOURNAL OF PHYSICAL CHEMISTRY C, 2011, 2011, 卷号: 115, 115, 期号: 15, 页码: 7225-7229, 7225-7229
作者:
Meng XQ
;
Wu FM
;
Li JB
;
Li, JB, Zhejiang Normal Univ, Res Ctr Light Emitting Diodes LED, Jinhua 321004, Peoples R China. jbli@semi.ac.cn
  |  
收藏
  |  
浏览/下载:37/2
  |  
提交时间:2011/07/05
COLLOIDAL NANOCRYSTAL HETEROSTRUCTURES
PHOTOLUMINESCENCE PROPERTIES
LATTICE DYNAMICS
TIN OXIDE
FILMS
NANOSTRUCTURES
SPECTRA
EXCITON
ARRAYS
RUTILE
Colloidal Nanocrystal Heterostructures
Photoluminescence Properties
Lattice Dynamics
Tin Oxide
Films
Nanostructures
Spectra
Exciton
Arrays
Rutile
Design of high polarization and single-mode photonic crystal laser
期刊论文
OAI收割
acta physica sinica, 2009, 卷号: 58, 期号: 6, 页码: 3955-3960
Chen W
;
Xing MX
;
Ren G
;
Wang K
;
Du XY
;
Zhang YJ
;
Zheng WH
收藏
  |  
浏览/下载:87/3
  |  
提交时间:2010/03/08
photonic crystal
dipole mode
quality factor
degree of polarization
Single-photon emission from a single InAs quantum dot
期刊论文
OAI收割
chinese physics letters, 2008, 卷号: 25, 期号: 2, 页码: 501-504
Dou, XM
;
Sun, BQ
;
Huang, SS
;
Ni, HQ
;
Niu, ZC
收藏
  |  
浏览/下载:39/2
  |  
提交时间:2010/03/08
FLUORESCENCE
TEMPERATURE
Influence of V/III ratio on the structural and photoluminescence properties of In0.52AlAs/In0.53GaAs metamorphic high electron mobility transistor grown by molecular beam epitaxy
期刊论文
OAI收割
chinese physics b, 2008, 卷号: 17, 期号: 3, 页码: 1119-1123
Gao, HL
;
Zeng, YP
;
Wang, BQ
;
Zhu, ZP
;
Wang, ZG
收藏
  |  
浏览/下载:54/6
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提交时间:2010/03/08
molecular beam epitaxy
semiconducting III-V materials
high electron mobility transistors
Photoluminescence properties of tensile-strained GaAsP/GaInP single quantum wells grown by metal organic chemical vapor deposition
期刊论文
OAI收割
japanese journal of applied physics, 2008, 卷号: 47, 期号: 9, 页码: 7026-7031 part 1
Zhong, L
;
Ma, XY
收藏
  |  
浏览/下载:55/0
  |  
提交时间:2010/03/08
tensile strain
GaAsP/GaInP
photoluminescence
quantum well
laser diodes
LP-MOCVD
Characterization of ZnMgO hexagonal-nanotowers/films on m-plane sapphire synthesized by metal organic chemical vapour deposition
期刊论文
OAI收割
journal of physics d-applied physics, 2008, 卷号: 41, 期号: 20, 页码: art. no. 205416
Yang, AL
;
Wei, HY
;
Liu, XL
;
Song, HP
;
Fan, HB
;
Zhang, PF
;
Zheng, GL
;
Yang, SY
;
Zhu, QS
;
Wang, ZG
收藏
  |  
浏览/下载:58/0
  |  
提交时间:2010/03/08
LOW-TEMPERATURE GROWTH
OPTICAL-PROPERTIES
ZNO NANOWIRES
THIN-FILMS
NANORODS
MGXZN1-XO
ZINC
Improved light extraction of GaN-based LEDs with nano-roughened p-GaN surfaces
期刊论文
OAI收割
chinese physics letters, 2008, 卷号: 25, 期号: 9, 页码: 3448-3451
Gao, HY
;
Yan, FW
;
Fan, ZC
;
Li, JM
;
Zeng, YP
;
Wang, GH
收藏
  |  
浏览/下载:74/0
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提交时间:2010/03/08
EMITTING-DIODES
EFFICIENCY
OUTPUT
Magnetophotoluminescence of Zn0.88Mn0.12Se grown by metal-organic chemical vapor deposition on GaAs substrates
期刊论文
OAI收割
journal of applied physics, 2006, 卷号: 99, 期号: 7, 页码: art.no.073517
作者:
Zhang JY
;
Jiang DS
收藏
  |  
浏览/下载:112/0
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提交时间:2010/04/11
QUANTUM DOTS
EXCHANGE INTERACTION
MAGNETIC-FIELDS
ZN1-XMNXSE
ZNMNSE
EXCITONS
Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells
期刊论文
OAI收割
applied physics letters, 2006, 卷号: 88, 期号: 1, 页码: art.no.011912
Sun Z
;
Xu ZY
;
Yang XD
;
Sun BQ
;
Ji Y
;
Zhang SY
;
Ni HQ
;
Niu ZC
收藏
  |  
浏览/下载:97/0
  |  
提交时间:2010/04/11
MOLECULAR-BEAM EPITAXY
GAASN ALLOYS
Effect of nonradiative recombination on carrier dynamics in GaInNAs/GaAs quantum wells
期刊论文
OAI收割
chinese physics letters, 2006, 卷号: 23, 期号: 9, 页码: 2566-2569
Sun Z (Sun Zheng)
;
Wang BR (Wang Bao-Rui)
;
Xu ZY (Xu Zhong-Ying)
;
Sun BQ (Sun Bao-Quan)
;
Ji Y (Ji Yang)
;
Ni HQ (Ni Hai-Qiao)
;
Niu ZC (Niu Zhi-Chuan)
收藏
  |  
浏览/下载:62/0
  |  
提交时间:2010/04/11
TIME-RESOLVED PHOTOLUMINESCENCE
MOLECULAR-BEAM EPITAXY
GAASN ALLOYS