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CAS IR Grid
机构
半导体研究所 [22]
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OAI收割 [17]
iSwitch采集 [5]
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期刊论文 [22]
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2011 [4]
2009 [4]
2008 [5]
2007 [1]
2006 [2]
2003 [2]
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学科主题
半导体物理 [9]
半导体材料 [7]
光电子学 [1]
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浏览/检索结果:
共22条,第1-10条
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内容类型:期刊论文
专题:半导体研究所
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Effect of transverse electric field on helical edge states in a quantum spin-hall system
期刊论文
iSwitch采集
Applied physics letters, 2011, 卷号: 99, 期号: 22, 页码: 3
作者:
Liu, Genhua
;
Zhou, Guanghui
;
Chen, Yong-Hai
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2019/05/12
Cadmium compounds
Ii-vi semiconductors
Mercury compounds
Quantum hall effect
Semiconductor quantum wells
Spin hall effect
Wide band gap semiconductors
Stability of the positively charged manganese centre in gaas heterostructures examined theoretically by the effective mass approximation calculation near the gamma critical point
期刊论文
iSwitch采集
Chinese physics b, 2011, 卷号: 20, 期号: 10, 页码: 8
作者:
Wang Li-Guo
;
Shen Chao
;
Zheng Hou-Zhi
;
Zhu Hui
;
Zhao Jian-Hua
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2019/05/12
Charged acceptor centre
Screening effect
Exchange interaction
Optical properties of the crescent and coherent applications
期刊论文
OAI收割
optics express, 2011, 卷号: 19, 期号: 9, 页码: 8303-8311
作者:
Jiang B
;
Yan XY
收藏
  |  
浏览/下载:62/7
  |  
提交时间:2011/07/06
ENHANCED RAMAN-SCATTERING
GOLD NANOPARTICLES
RESONANCE
SPECTROSCOPY
NANOCAVITIES
Stability of the positively charged manganese centre in GaAs heterostructures examined theoretically by the effective mass approximation calculation near the Gamma critical point
期刊论文
OAI收割
chinese physics b, CHINESE PHYSICS B, 2011, 2011, 卷号: 20, 20, 期号: 10, 页码: 100301, 100301
作者:
Wang, LG
;
Shen, C
;
Zheng, HZ
;
Zhu, H
;
Zhao, JH
  |  
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2012/01/06
charged acceptor centre
screening effect
exchange interaction
SHALLOW ACCEPTOR STATES
GALLIUM-ARSENIDE
SEMICONDUCTORS
FIELD
Charged Acceptor Centre
Screening Effect
Exchange Interaction
Shallow Acceptor States
Gallium-arsenide
Semiconductors
Field
Spin dynamics of electrons in the first excited subband of a high-mobility low-density two-dimensional electron system
期刊论文
iSwitch采集
Physical review b, 2009, 卷号: 80, 期号: 19, 页码: 4
作者:
Luo, Haihui
;
Qian, Xuan
;
Ruan, Xuezhong
;
Ji, Yang
;
Umansky, Vladimir
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2019/05/12
Aluminium compounds
Electron mobility
Electron spin polarisation
Exchange interactions (electron)
Excited states
Gallium arsenide
Iii-v semiconductors
Kerr magneto-optical effect
Magnetic moments
Optical rotation
Spin dynamics
Time resolved spectra
Two-dimensional electron gas
Depolarization blueshift in intersubband transitions of triangular quantum wires
期刊论文
OAI收割
journal of applied physics, 2009, 卷号: 106, 期号: 11, 页码: art. no. 113712
作者:
Song HP
;
Zhang B
收藏
  |  
浏览/下载:31/0
  |  
提交时间:2010/04/04
aluminium compounds
effective mass
gallium arsenide
III-V semiconductors
SCF calculations
semiconductor quantum wires
spectral line shift
EXCHANGE INTERACTION
ENERGY
STATES
ABSORPTION
NANOWIRES
ELECTRONS
SUBBANDS
WELLS
FIELD
Spin-Polarized Localized Exciton Photoluminescence Dynamics in GaInNAs Quantum Wells
期刊论文
OAI收割
japanese journal of applied physics, 2009, 卷号: 48, 期号: 10, 页码: art.no.100206
Lu SL (Lu, Shulong)
;
Nosho H (Nosho, Hidetaka)
;
Tackeuchi A (Tackeuchi, Atsushi)
;
Bian LF (Bian, Lifeng)
;
Dong JR (Dong, Jianrong)
;
Niu ZC (Niu, Zhichuan)
收藏
  |  
浏览/下载:175/28
  |  
提交时间:2010/03/08
ALLOYS
Measurement of polar C-plane and nonpolar A-plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy
期刊论文
OAI收割
applied physics letters, 2009, 卷号: 94, 期号: 16, 页码: art. no. 163301
作者:
Jin P
;
Wei HY
;
Song HP
收藏
  |  
浏览/下载:310/47
  |  
提交时间:2010/03/08
conduction bands
III-V semiconductors
II-VI semiconductors
indium compounds
interface states
polarisation
semiconductor heterojunctions
valence bands
wide band gap semiconductors
X-ray photoelectron spectra
zinc compounds
Magnetic coupling properties of mn-doped zno nanowires: first-principles calculations
期刊论文
iSwitch采集
Journal of applied physics, 2008, 卷号: 103, 期号: 7, 页码: 5
作者:
Shi, Hongliang
;
Duan, Yifeng
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2019/05/12
Nitrogen defects and ferromagnetism in Cr-doped dilute magnetic semiconductor AlN from first principles
期刊论文
OAI收割
physical review b, 2008, 卷号: 78, 期号: 19, 页码: art. no. 195206
Shi LJ
;
Zhu LF
;
Zhao YH
;
Liu BG
收藏
  |  
浏览/下载:217/56
  |  
提交时间:2010/03/08
ab initio calculations
aluminium compounds
annealing
band structure
chromium
Curie temperature
density functional theory
exchange interactions (electron)
ferromagnetic materials
III-V semiconductors
semimagnetic semiconductors
total energy
vacancies (crystal)