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CAS IR Grid
机构
半导体研究所 [7]
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OAI收割 [4]
iSwitch采集 [3]
内容类型
期刊论文 [7]
发表日期
2009 [2]
2008 [2]
2006 [1]
2005 [2]
学科主题
半导体材料 [3]
半导体物理 [1]
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专题:半导体研究所
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Depolarization blueshift in intersubband transitions of triangular quantum wires
期刊论文
iSwitch采集
Journal of applied physics, 2009, 卷号: 106, 期号: 11, 页码: 4
作者:
Zhang, B.
;
Lu, Y. W.
;
Song, H. P.
;
Liu, X. L.
;
Yang, S. Y.
收藏
  |  
浏览/下载:33/0
  |  
提交时间:2019/05/12
Aluminium compounds
Effective mass
Gallium arsenide
Iii-v semiconductors
Scf calculations
Semiconductor quantum wires
Spectral line shift
Depolarization blueshift in intersubband transitions of triangular quantum wires
期刊论文
OAI收割
journal of applied physics, 2009, 卷号: 106, 期号: 11, 页码: art. no. 113712
作者:
Song HP
;
Zhang B
收藏
  |  
浏览/下载:31/0
  |  
提交时间:2010/04/04
aluminium compounds
effective mass
gallium arsenide
III-V semiconductors
SCF calculations
semiconductor quantum wires
spectral line shift
EXCHANGE INTERACTION
ENERGY
STATES
ABSORPTION
NANOWIRES
ELECTRONS
SUBBANDS
WELLS
FIELD
Strain relaxation and band-gap tunability in ternary inxga1-xn nanowires
期刊论文
iSwitch采集
Physical review b, 2008, 卷号: 78, 期号: 19, 页码: 4
作者:
Xiang, H. J.
;
Wei, Su-Huai
;
Da Silva, Juarez L. F.
;
Li, Jingbo
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2019/05/12
Density functional theory
Energy gap
Enthalpy
Gallium compounds
Ground states
Iii-v semiconductors
Indium compounds
Monte carlo methods
Nanowires
Semiconductor quantum wires
Wide band gap semiconductors
Strain relaxation and band-gap tunability in ternary InxGa1-xN nanowires
期刊论文
OAI收割
physical review b, 2008, 卷号: 78, 期号: 19, 页码: art. no. 193301
作者:
Li JB
收藏
  |  
浏览/下载:209/43
  |  
提交时间:2010/03/08
density functional theory
energy gap
enthalpy
gallium compounds
ground states
III-V semiconductors
indium compounds
Monte Carlo methods
nanowires
semiconductor quantum wires
wide band gap semiconductors
Effect of substrate temperature on the growth and photoluminescence properties of vertically aligned ZnO nanostructures
期刊论文
OAI收割
journal of crystal growth, 2006, 卷号: 292, 期号: 1, 页码: 19-25
Li C (Li Chun)
;
Fang GJ (Fang Guojia)
;
Fu Q (Fu Qiang)
;
Su FH (Su Fuhai)
;
Li GH (Li Guohua)
;
Wu XG (Wu Xiaoguang)
;
Zhao XZ (Zhao Xingzhong)
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2010/04/11
nanostructure
vapor phase transport
ZnO
semiconductor materials
PHYSICAL VAPOR-DEPOSITION
OPTICAL-PROPERTIES
THERMAL EVAPORATION
FIELD-EMISSION
NANOWIRES
NANORODS
MECHANISM
ARRAYS
Structural and optical properties of inas/in0.52al0.48as self-assembled quantum wires on inp(001)
期刊论文
iSwitch采集
Journal of crystal growth, 2005, 卷号: 284, 期号: 3-4, 页码: 306-312
作者:
Wang, YL
;
Chen, YH
;
Wu, J
;
Lei, W
;
Wang, ZG
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2019/05/12
High-resolution transmission electron microscopy
Nananostructures
Optical properties
Inas quantum wire
Molecular beam epitaxy
Semiconductiong iii-v materials
Optical properties of self-assembled InAs/InAlAs/InP quantum wires with different InAs deposited thickness
期刊论文
OAI收割
journal of crystal growth, 2005, 卷号: 286, 期号: 1, 页码: 23-27
作者:
Jin P
;
Xu B
收藏
  |  
浏览/下载:58/0
  |  
提交时间:2010/04/11
defects
lateral composition modulation
photoluminescence
molecular beam epitaxy
quantum wires
semiconductor III-V material
DOTS
HETEROSTRUCTURES
INALAS/INP(001)
SPECTROSCOPY
WAVELENGTH
INP(001)