中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
新疆理化技术研究所 [7]
采集方式
OAI收割 [7]
内容类型
期刊论文 [7]
发表日期
2019 [7]
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浏览/检索结果:
共7条,第1-7条
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存缴方式:oaiharvest
发表日期:2019
专题:新疆理化技术研究所
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Spectral and electrical properties of 3 MeV and 10 MeV proton irradiated InGaAsP single junction solar cell
期刊论文
OAI收割
JAPANESE JOURNAL OF APPLIED PHYSICS, 2019, 卷号: 58, 期号: 3, 页码: 1-6
作者:
Xu, Y (Xu, Yan)[ 1,2 ]
;
Heini, M (Heini, Maliya)[ 2 ]
;
Shen, XB (Shen, Xiaobao)[ 2,3 ]
;
Aierken, A (Aierken, Abuduwayiti)[ 2,4 ]
;
Zhao, XF (Zhao, Xiaofan)[ 2 ]
  |  
收藏
  |  
浏览/下载:136/0
  |  
提交时间:2019/03/19
Heavy ion-induced single event effects in active pixel sensor array
期刊论文
OAI收割
SOLID-STATE ELECTRONICS, 2019, 卷号: 152, 期号: 2, 页码: 93-99
作者:
Cai, YL (Cai, Yu-Long)[ 1,2,3 ]
;
Guo, Q (Guo, Qi)[ 1,2 ]
;
Li, YD (Li, Yu-Dong)[ 1,2 ]
;
Wen, L (Wen, Lin)[ 1,2 ]
;
Zhou, D (Zhou, Dong)[ 1,2 ]
  |  
收藏
  |  
浏览/下载:129/0
  |  
提交时间:2019/01/03
CMOS active pixel sensor (APS)
SEE
Heavy ion
Synergistic effect of enhanced low-dose-rate sensitivity and single event transient in bipolar voltage comparator LM139
期刊论文
OAI收割
JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY, 2019, 卷号: 56, 期号: 2, 页码: 172-178
作者:
Yao, S (Yao, Shuai)[ 1,2,3 ]
;
Lu, W (Lu, Wu)[ 1,2,4 ]
;
Yu, X (Yu, Xin)[ 1,2 ]
;
Wang, X (Wang, Xin)[ 1,2 ]
;
Li, XL (Li, Xiaolong)[ 1,2,3 ]
  |  
收藏
  |  
浏览/下载:85/0
  |  
提交时间:2019/02/25
Enhanced low dose rate sensitivity
single event transient
bipolar voltage comparator
synergistic effect
Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors
期刊论文
OAI收割
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 4, 页码: 702-709
作者:
Zheng, QW (Zheng, Qiwen)[ 1 ]
;
Cui, JW (Cui, Jiangwei)[ 1 ]
;
Xu, LW (Xu, Liewei)[ 2 ]
;
Ning, BX (Ning, Bingxu)[ 3 ]
;
Zhao, K (Zhao, Kai)[ 3 ]
  |  
收藏
  |  
浏览/下载:99/0
  |  
提交时间:2019/05/14
Back-gate biasing
forward body bias (FBB)
total ionizing dose (TID)
ultrathin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI)
Electron irradiation-induced defects and photoelectric properties of Te-doped GaSb
期刊论文
OAI收割
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2019, 卷号: 132, 期号: 9, 页码: 26-30
作者:
Wang, DK (Wang, Dengkui)[ 1 ]
;
Chen, BK (Chen, Bingkun)[ 1 ]
;
Wei, ZP (Wei, Zhipeng)[ 1 ]
;
Fang, X (Fang, Xuan)[ 1 ]
;
Tang, JL (Tang, Jilong)[ 1 ]
  |  
收藏
  |  
浏览/下载:57/0
  |  
提交时间:2019/07/23
GaSb
Electron irradiation
Photoluminescence
Defects
A study on effects of total ionizing dose on hot carrier effect of PD I/O SOI PMOSFETs
期刊论文
OAI收割
RESULTS IN PHYSICS, 2019, 卷号: 13, 期号: 6, 页码: 1-5
作者:
Zhao, JH (Zhao, Jinghao)[ 1,2,3 ]
;
Zheng, QW (Zheng, Qiwen)[ 1,2 ]
;
Cui, JW (Cui, Jiangwei)[ 1,2 ]
;
Zhou, H (Zhou, Hang)[ 1,2,3 ]
;
Liang, XW (Liang, Xiaowen)[ 1,2,3 ]
  |  
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2020/03/20
Hot carrier effect
PMOS
Total ionizing dose effect
Mechanism of Degradation Rate on the Irradiated Double-Polysilicon Self-Aligned Bipolar Transistor
期刊论文
OAI收割
ELECTRONICS, 2019, 卷号: 8, 期号: 6, 页码: 1-8
作者:
Liu, MH (Liu, Mohan)[ 1,2 ]
;
Lu, W (Lu, Wu)[ 1 ]
;
Yu, X (Yu, Xin)[ 1,2 ]
;
Wang, X (Wang, Xin)[ 1 ]
;
Li, XL (Li, Xiaolong)[ 1 ]
  |  
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2020/04/03
saturation effect
gain degradation
total ionizing dose
gamma ray
bipolar transistor