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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [57]
采集方式
OAI收割 [57]
内容类型
期刊论文 [57]
发表日期
2013 [2]
2012 [1]
2011 [1]
2010 [3]
2009 [1]
2008 [2]
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学科主题
半导体物理 [57]
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学科主题:半导体物理
内容类型:期刊论文
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Interlayer Coupling Behaviors of Boron Doped Multilayer Graphene
期刊论文
OAI收割
The Journal of Physical Chemistry C, 2017, 卷号: 121, 页码: 26034−26043
作者:
Guorui Wang
;
Xiaoli Li
;
Yanlei Wang
;
Zhiyue Zheng
;
Zhaohe Dai
收藏
  |  
浏览/下载:33/0
  |  
提交时间:2018/06/15
Space Program SJ-10 of Microgravity Research
期刊论文
OAI收割
microgravity science and technology, MICROGRAVITY SCIENCE AND TECHNOLOGY, 2014, 2014, 卷号: 26, 26, 期号: 3, 页码: 159-169, 159-169
作者:
Hu, WR
;
Zhao, JF
;
Long, M
;
Zhang, XW
;
Liu, QS
  |  
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2015/03/20
High quality above 3-μm mid-infrared InGaAsSb_AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy
期刊论文
OAI收割
Chin.Phys.B, Chin.Phys.B, 2013, 2013, 卷号: 23, 23, 期号: 1, 页码: 017805, 017805
作者:
Xing Jun-Liang, Zhang Yu, Xu Ying-Qiang, Wang Guo-Wei, Wang Juan, Xiang Wei, Ni Hai-Qiao, Ren Zheng-Wei, He Zhen-Hong, Niu Zhi-Chuan
  |  
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2014/03/26
Molecular beam epitaxy growth of high electron mobility InAs AlSb deep
期刊论文
OAI收割
journal of applied physics, Journal of Applied Physics, 2013, 2013, 卷号: 114, 114, 期号: 1, 页码: 013704, 013704
作者:
Juan Wang, Guo-Wei Wang, Ying-Qiang Xu, Jun-Liang Xing, Wei Xiang, Bao Tang, Yan Zhu, Zheng-Wei Ren, Zhen-Hong He, Zhi-Chuan Niu
  |  
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2014/03/26
Generating and reversing spin accumulation by temperature gradient in a quantum dot attached to ferromagnetic leads
期刊论文
OAI收割
chinese physics b, Chinese Physics B, 2012, 2012, 卷号: 21, 21, 期号: 7, 页码: 077301, 077301
作者:
Bai, Xu-Fang
;
Chi, Feng
;
Zheng, Jun
;
Li, Yi-Nan
  |  
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2013/05/07
Electronic band structures and electron spins of InAs/GaAs quantum dots induced by wetting-layer fluctuation
期刊论文
OAI收割
journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2011, 2011, 卷号: 110, 110, 期号: 5, 页码: 54320, 54320
作者:
Ning JQ
;
Xu SJ
;
Ruan XZ
;
Ji Y
;
Zheng HZ
  |  
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2012/01/06
WELLS
RELAXATION
HOLE
PHOTOLUMINESCENCE
SEMICONDUCTORS
LOCALIZATION
TRANSITIONS
EXCITONS
CARRIERS
GROWTH
Wells
Relaxation
Hole
Photoluminescence
Semiconductors
Localization
Transitions
Excitons
Carriers
Growth
Growth and Characterization of GaSb-Based Type-II InAs/GaSb Superlattice Photodiodes for Mid-Infrared Detection
期刊论文
OAI收割
chinese physics letters, CHINESE PHYSICS LETTERS, 2010, 2010, 卷号: 27, 27, 期号: 7, 页码: art. no. 077305, Art. No. 077305
作者:
Wang GW (Wang Guo-Wei)
;
Xu YQ (Xu Ying-Qiang)
;
Guo J (Guo Jie)
;
Tang B (Tang Bao)
;
Ren ZW (Ren Zheng-Wei)
  |  
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2010/08/17
IR DETECTION MODULES
Ir Detection Modules
Inas
INAS
Spin injection in the multiple quantum-well LED structure with the Fe/AlO (x) injector
期刊论文
OAI收割
science china-physics mechanics & astronomy, SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2010, 2010, 卷号: 53, 53, 期号: 4, 页码: 649-653, 649-653
作者:
Wu H (Wu Hao)
;
Zheng HZ (Zheng HouZhi)
;
Liu J (Liu Jian)
;
Li GR (Li GuiRong)
;
Xu P (Xu Ping)
  |  
收藏
  |  
浏览/下载:81/2
  |  
提交时间:2010/05/04
spintronics
Spintronics
Spin Injection
Light Emitting Diode
Multiple Quantum Well
Semiconductor Spintronics
spin injection
light emitting diode
multiple quantum well
SEMICONDUCTOR SPINTRONICS
Ultrafast Kerr rotations and zero-field dephasing time of electron spins in InAs/GaAs quantum disks
期刊论文
OAI收割
physics letters a, PHYSICS LETTERS A, 2010, 2010, 卷号: 374, 374, 期号: 47, 页码: 4793-4796, 4793-4796
作者:
Ning JQ (Ning J. Q.)
;
Xu SJ (Xu S. J.)
;
Wei ZF (Wei Z. F.)
;
Ruan XZ (Ruan X. Z.)
;
Ji Y (Ji Yang)
  |  
收藏
  |  
浏览/下载:41/0
  |  
提交时间:2010/12/05
Optical Kerr effect
Optical Kerr Effect
Electron Spin
Quantum Disks
Inas/gaas
Refractive-index
Coherence
Gaas
Semiconductors
Electron spin
Quantum disks
InAs/GaAs
REFRACTIVE-INDEX
COHERENCE
GAAS
SEMICONDUCTORS
High responsivity resonant-cavity-enhanced InGaAs/GaAs quantum-dot photodetector for wavelength of similar to 1 mu m at room temperature
期刊论文
OAI收割
electronics letters, 2009, 卷号: 45, 期号: 6, 页码: 329-330
作者:
Zhu H
;
Liu J
收藏
  |  
浏览/下载:252/78
  |  
提交时间:2010/03/08
PHOTODIODE