机构

• 长春光学精密机械与物... [9]

采集方式

• OAI收割 [9]

内容类型

• 会议论文 [9]

发表日期

• 2011 [1]
• 2005 [8]

学科主题

筛选

浏览/检索结果: 共9条，第1-9条 帮助 限定条件 存缴方式：oaiharvest    内容类型：会议论文    专题：长春光学精密机械与物理研究所    第一署名单位    第一作者单位    通讯作者单位     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序作者升序作者降序发表日期升序发表日期降序 Control of N/N2 species ratio in NO plasma for p-type doping of ZnO (EI CONFERENCE) 会议论文  OAI收割 作者:  Chen X.;  Liu L.;  Liu L.;  Li B.;  Li B. 收藏  |  浏览/下载：14/0  |  提交时间：2013/03/25 Nitrogen-doped ZnO thin films were grown on c-plane sapphire (Al 2O3) substrates via plasma-assisted molecular beam epitaxy using plasma activated nitric oxide (NO) as the oxygen source and dopant. X-ray diffraction measurements indicate that a small NO flux benefits the crystal quality of the thin films. Hall effect measurements indicate that the electron density of the ZnO films decreases gradually with decreasing NO flux  and the conduction reverses to p-type at a certain flux. Optical emission spectra indicate that the N atom content in the NO plasma increases with decreasing NO flux  and the origin of this is discussed. X-ray photoelectron spectroscopy measurements demonstrate that the number of N atom occupied O sites in the ZnO lattice increases correspondingly. 2011 American Institute of Physics.   Vertical-external-cavity surface-emitting lasers operating at different wavelength: design, numerical simulation, and characteristics - art. no. 602004 会议论文  OAI收割 2005 作者:  Qin L. 收藏  |  浏览/下载：8/0  |  提交时间：2013/03/28 980nm high power Vertical External-cavity Surface-emitting Semiconductor Lasers (VECSEL) (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Materials and Devices for Optical Communications, November 7, 2005 - November 10, 2005, Shanghai, China 作者:  Ning Y.-Q.;  Wang L.-J.;  Wang L.-J.;  Qin L. 收藏  |  浏览/下载：12/0  |  提交时间：2013/03/25 We describe the design  fabrication  and calculation characteristics of the 980nm high-power diode-pumped vertical external-cavity surface-emitting laser(VECSEL).From our calculation  the VECSEL with active region of InGaAs/GaAsP/AlGaAs system can operate near 1w in a single transverse mode.   High-power VCSELs single devices aid 2-D arrays (EI CONFERENCE) 会议论文  OAI收割 ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China 作者:  Liu Y.;  Wang L.;  Wang L.;  Wang L.;  Liu Y. 收藏  |  浏览/下载：11/0  |  提交时间：2013/03/25 The high power bottom-emitting vertical-cavity surface-emitting lasers (VCSELs) and laser arrays emitting at 980 nm are reported. Extensive investigations on size scaling behavior of thermal properties of single devices show limits of attainable output characteristics. The maximum continuous wave (CW) output power at room temperature of single devices with aperture size up to 500 m is as high as 1.95 W. The key characteristics such as maximum output power  wavelength and thermal resistance are discussed. The bottom-emitting arrays of 16 elements and 200 m aperture size of individual elements show output power of CW 1.35 W at room temperature. The far-field angle is below 17 for all driving current  which is very favorable for focusing or collmating optics.   Vertical-external-cavity surface-emitting lasers operating at different wavelength: Design, numerical simulation, and characteristics (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Materials and Devices for Optical Communications, November 7, 2005 - November 10, 2005, Shanghai, China 作者:  Qin L.;  Jiang H.;  Wang L.;  Wang L.;  Wang L. 收藏  |  浏览/下载：12/0  |  提交时间：2013/03/25 We describe design  numerical simulation and characteristics of high-power optical pumped VECSELs at different wavelength (980nm  and 1300nm). The device design realizes the integrating diode-pumped lasers with vertical-cavity surface-emitting laser structure  drawing on the advantages of both. With periodical gain element structure  optical pumped VECSEL is scalable to watt level output. The characteristics such as threshold condition and output power are calculated theoretically. An optimum number of quantum wells and external mirror reflectivity are obtained from the calculation results  and the thermal characteristic is also considered. Finally the calculation results also predict high output power in this kind of device structure.   Theoretical analysis of 980nm high power vertical external-cavity surface-emitting semiconductor laser (VECSEL) - art. no. 60280X 会议论文  OAI收割 2005 作者:  Qin L. 收藏  |  浏览/下载：7/0  |  提交时间：2013/03/28 980nm high power vertical external-cavity surface-emitting semiconductor lasers (VECSEL) - art. no. 602003 会议论文  OAI收割 2005 作者:  Qin L. 收藏  |  浏览/下载：10/0  |  提交时间：2013/03/28 Theoretical analysis of 980nm high power Vertical External-cavity Surface-emitting Semiconductor Laser (VECSEL) (EI CONFERENCE) 会议论文  OAI收割 ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China 作者:  Wang L.-J.;  Wang L.-J.;  Ning Y.-Q.;  Qin L. 收藏  |  浏览/下载：15/0  |  提交时间：2013/03/25 By using bottom-emitting structure  we will develop laser diode (LD) pumped 980 nm VECSEL with active region of InGaAs/GaAsP/AlGaAs system. Because the thickness of barrier layer and absorption layer exceed that of quantum well  single well approximation model (KP method) can be used to calculate the band structure of VECSEL. The Schrodinger equation of finite deep potential well can be adopted to calculate the energy level structures of electron  heavy and light holes. According to the transition selection rule  we theoretically obtained the emitting wavelength of VECSEL and calculated quasi-Femi energy of valence band and conduction band based on the analysis of energy level structure of electron and holes. By analyzing the gain of strained quantum wells  we calculated the gain of VECSEL using transition matrix elements of electron  heavy and light holes. We give out the threshold gain  output power and other characteristic parameters. We will study the configuration of VECSEL and pumping scheme. We designed external cavity mirror  active region and bottom-emitting structure. A LD-pumped vertical external cavity surface-emitting laser whose output power is greater than 1.0 W can be predicted.   High-power VCSELs single devices and 2-D arrays - art. no. 60280F 会议论文  OAI收割 2005 作者:   收藏  |  浏览/下载：16/0  |  提交时间：2013/03/28