中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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  • 2007 [2]
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  • 半导体材料 [2]
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Subband electron properties of InGaAs/InAlAs high-electron-mobility transistors with different channel chickness 期刊论文  OAI收割
acta physica sinica, 2007, 卷号: 56, 期号: 8, 页码: 4955-4959
Gao, HL (Gao Hong-Ling); Li, DL (Li Dong-Lin); Zhou, WZ (Zhou Wen-Zheng); Shang, LY (Shang Li-Yan); Wang, BQ (Wang Bao-Qiang); Zhu, ZP (Zhu Zhan-Ping); Zeng, YP (Zeng Yi-Ping)
收藏  |  浏览/下载：39/0  |  提交时间：2010/03/29
Weak anti-localization in InAlAs/InGaAs/InAlAs high mobility two-dimensional electron gas systems 期刊论文  OAI收割
acta physica sinica, 2007, 卷号: 56, 期号: 7, 页码: 4099-4104
Zhou WZ (Zhou Wen-Zheng); Lin T (Lin Tie); Shang LY (Shang Li-Yan); Huang ZM (Huang Zhi-Ming); Cui LJ (Cui Li-Jie); Li DL (Li Dong-Lin); Gao HL (Gao Hong-Ling); Zeng YP (Zeng Yi-Pine); Guo SL (Guo Shao-Ling); Gui YS (Gui Yong-Sheng); Chu JH (Chu Jun-Hao)
收藏  |  浏览/下载：65/0  |  提交时间：2010/03/29