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• 上海微系统与信息技... [22]

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• OAI收割 [22]

内容类型

• 期刊论文 [22]

发表日期

• 2007 [22]

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• Physics, A... [9]
• Physics, M... [4]
• Chemistry,... [2]
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浏览/检索结果: 共22条，第1-10条 帮助 限定条件 发表日期：2007    专题：上海微系统与信息技术研究所    第一署名单位    第一作者单位    通讯作者单位     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序作者升序作者降序发表日期升序发表日期降序 Multiple phase-transition in Ge2Sb2Te5 based phase change memory cell by current-voltage measurement 期刊论文  OAI收割 JOURNAL OF NON-CRYSTALLINE SOLIDS, 2007, 卷号: 353, 期号: 44-46, 页码: 4043-4047 Wu, LC; Song, ZT; Liu, B; Zhang, T; Rao, F; Shen, J; Wang, F; Feng, SL 收藏  |  浏览/下载：9/0  |  提交时间：2012/03/24 FILM  NONVOLATILE   Te-free SiSb phase change material for high data retention phase change memory application 期刊论文  OAI收割 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2007, 卷号: 46, 期号: 25-28, 页码: L602-L604 Zhang, T; Song, ZT; Wang, F; Liu, B; Feng, SL; Chen, B 收藏  |  浏览/下载：6/0  |  提交时间：2012/03/24 Reversible resistance switching of GeTi thin film used for non-volatile memory 期刊论文  OAI收割 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2007, 卷号: 46, 期号: 1-3, 页码: L1-L3 Shen, J; Xu, C; Liu, B; Song, ZT; Wu, LC; Feng, SL; Chen, B 收藏  |  浏览/下载：11/0  |  提交时间：2012/03/24 NEGATIVE RESISTANCE  PHASE-CHANGE  OXIDE-FILMS  TRANSITION  DEVICE   Stress reduction of GaN deposited on SOI substrates by MOCVD 期刊论文  OAI收割 Gongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices, v 13, n 4, August, 2007, p 367-370, 2007, 卷号: 13, 期号: 4, 页码: 367-370 Sun, Jia-Yin (The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS); Chen, Jing; Wang, Xi; Wang, Jian-Feng; Liu, Wei; Zhu, Jian-Jun; Yang, Hui 收藏  |  浏览/下载：8/0  |  提交时间：2012/06/13 Current-voltage characteristic of C-RAM nano-cell-element 期刊论文  OAI收割 Nanoscience and Technology, Pts 1 and 2, 2007, 卷号: 121-123, 页码: 591-594 Liu, B; Song, ZT; Feng, SL; Chen, B 收藏  |  浏览/下载：9/0  |  提交时间：2012/03/24 RANDOM-ACCESS MEMORY  FILMS   Investigation of compositional gradient phase change SixSb2Te3 thin films 期刊论文  OAI收割 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2007, 卷号: 46, 期号: 1-3, 页码: L70-L73 Zhang, T; Song, ZT; Liu, B; Feng, SL; Chen, B 收藏  |  浏览/下载：12/0  |  提交时间：2012/03/24 GE2SB2TE5 FILM  CRYSTALLIZATION  IMPLANTATION  RESISTANCE  STORAGE  MEMORY   Investigation of phase change Si(2)Sb(2)Te(5)material and its application in chalcogenide random access memory 期刊论文  OAI收割 SOLID-STATE ELECTRONICS, 2007, 卷号: 51, 期号: 6, 页码: 950-954 Zhang, T; Song, ZT; Liu, B; Feng, SL; Chen, BM 收藏  |  浏览/下载：7/0  |  提交时间：2012/03/24 THIN-FILM  GE2SB2TE5   First-principles study of equilibrium properties and electronic structures of GeTe-Sb2Te3 pseudobinary crystalline films 期刊论文  OAI收割 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 卷号: 46, 期号: 7A, 页码: 4215-4219 Yu, JL; Song, ZT; Liu, B; Feng, SL; Chen, BM 收藏  |  浏览/下载：10/0  |  提交时间：2012/03/24 PHASE-CHANGE  TEMPERATURE  DIFFRACTION  STABILITY  WAVE   Effects of Ge doping on the properties of Sb2Te3 phase-change thin films 期刊论文  OAI收割 APPLIED SURFACE SCIENCE, 2007, 卷号: 253, 期号: 14, 页码: 6125-6129 Yu, JL; Liu, B; Zhang, T; Song, ZT; Feng, SL; Chen, BM 收藏  |  浏览/下载：19/0  |  提交时间：2012/03/24 TRANSMISSION ELECTRON-MICROSCOPY  CHALCOGENIDE GLASSES  ANTIMONY TELLURIDE  SINGLE-CRYSTALS  MEMORY  GE2SB2TE5  CRYSTALLIZATION  TRANSITION   Advantages of SiSb phase-change material and its applications in phase-change memory 期刊论文  OAI收割 APPLIED PHYSICS LETTERS, 2007, 卷号: 91, 期号: 22, 页码: 222102-222102 Zhang, T; Song, ZT; Wang, F; Liu, B; Feng, SL; Chen, B 收藏  |  浏览/下载：15/0  |  提交时间：2012/03/24 FILMS