中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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  • 2015 [2]
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Effects of a GaN cap layer on the reliability of AlGaN/GaN Schottky diodes 期刊论文  OAI收割
phys. status solidi a, 2015, 卷号: 212, 期号: 5, 页码: 1158-1161
He Kang; Quan Wang; Hongling Xiao; Cuimei Wang; Lijuan Jiang; Chun Feng; Hong Chen; Haibo Yin; Shenqi Qu; Enchao Peng; Jiamin Gong; Xiaoliang Wang; Baiquan Li; Zhanguo Wang; Xun Hou
收藏  |  浏览/下载:30/0  |  提交时间:2016/03/29
A Novel Multi-Finger Gate Structure of AlGaN/GaN High Electron Mobility Transistor 期刊论文  OAI收割
chin. phys. lett., 2015, 卷号: 32, 期号: 5, 页码: 58501-58504
Lei Cui; Quan Wang; XiaoLiang Wang; HongLing Xiao; CuiMei Wang; LiJuan Jiang; Chun Feng; HaiBo Yin; JiaMin Gong; BaiQuan Li; ZhanGuo Wang
收藏  |  浏览/下载:28/0  |  提交时间:2016/03/29