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	Microstructure damage in silicon carbide fiber induced by 246.8-MeV Ar-ion irradiation 会议论文 OAI收割作者: Zhang, Liqing; Zhang, Chonghong; Huang, Qing; Ding, Zhaonan; Yan, Tingxing \| 收藏 \| 浏览/下载：40/0 \| 提交时间：2019/03/27 SiC fibers Ar-ion irradiation TEM Raman scattering spectra SEM
	CONVOLUTION CALCULATION OF DIFFERENTIAL CROSS SECTIONS OF RING EFFECT 会议论文 OAI收割 2010 Ieee International Geoscience and Remote Sensing Symposium, New York Han, Dong; Chen, Liangfu; Wu, Weimin; Li, Shenshen; ChaoYu 收藏 \| 浏览/下载：18/0 \| 提交时间：2014/12/07 Ring effect DOAS trace gas rotational Raman scattering N(2) and O(2) ROTATIONAL RAMAN-SCATTERING SKY SPECTRA FRAUNHOFER ABSORPTION
	Temperature-enhanced ultraviolet emission in ZnO thin film (EI CONFERENCE) 会议论文 OAI收割 Zhang Y. J.; Xu C. S.; Liu Y. C.; Liu Y. X.; Wang G. R.; Fan X. W. 收藏 \| 浏览/下载：14/0 \| 提交时间：2013/03/25 We have studied the structural and optical properties of ZnO thin films prepared by thermal oxidation of ZnS films deposited by plasma assisted electron-beam evaporation on Si(1 0 0) substrates. The transformation from zinc blende ZnS to hexagonal wurtzite ZnO is confirmed by Raman and X-ray diffraction (XRD) measurement. For the sample thermally oxidized at 600 C for 2 h a novel UV emission peak Ix located at 3.22 eV (385 nm) has been observed. The temperature-dependent photoluminescence spectra show that the integrated intensity of Ix increases exponentially with increasing temperatures within the measuring temperature range from 80 to 300 K but the peak position remains nearly constant. We explain this behavior in terms of electron tunneling into the radiative recombination centers.
	Fabrication of polysilicon thin film on glass with low-temperature UV-assisted crystallization (EI CONFERENCE) 会议论文 OAI收割 ICO20: Display Devices and Systems, August 21, 2005 - August 26, 2005, Changchun, China Huang J. Y.; Ling Z. H.; Jing H.; Fu G. Z.; Zhao Y. H. 收藏 \| 浏览/下载：20/0 \| 提交时间：2013/03/25 The amorphous silicon (a-Si) film was crystallized on glass by a simple method employed ultraviolet at temperatures as low as 400C. The employ of ultraviolet enhanced the crystallization of amorphous silicon. This method is able to uniformly crystallized large-area amorphous silicon films. The polysilicon films crystallized by this way are suitable for the fabrication of thin film transistors on ordinary glass. Crystallization process is performed in a furnace. Amorphous silicon sample is placed on a hot plate and irradiated by a bank of ultraviolet lamps through a diffuser plate to improve the uniformity of light that irradiates the sample. Raman microscopy is used for analyzing the qualities of UV-assisted crystallized silicon films. By measuring the Raman spectra the effects of anneal temperature and process time on the crystallizing behavior crystallinity and grain size of the processed films were obtained. There has a threshold temperature for crystallization of amorphous silicon film in the presence of ultraviolet irradiation with certain intensity i.e. by ultraviolet irradiation with certain intensity only when the temperature is up to the threshold temperature the crystallization can be triggered. The threshold temperature is 400C when the intensity of ultraviolet irradiation is 1mW/cm2. Above threshold temperature the increase of anneal temperature increased the rate of crystallization. Crystallinity and grain size extracted from Raman spectra of samples increase with the extending of process time at certain temperature. Crystallization of amorphous silicon film with thickness of 50nm completed within 6 hours at 400C irradiated by ultraviolet with intensity of 2mW/cm2.
	Raman spectra and phonon modes of MgxZn1-xO alloy films (EI CONFERENCE) 会议论文 OAI收割 12th International Conference on II-VI Compounds, September 12, 2005 - September 16, 2005, Warsaw, Poland Wei Z. P.; Lu Y. M.; Shen D. Z.; Zhang Z. Z.; Wu C. X.; Zhang J. Y.; Yao B.; Fan X. W. 收藏 \| 浏览/下载：13/0 \| 提交时间：2013/03/25 Hexagonal MgxZn1-xO alloy layers with 0 &le 0.3 have been grown by plasma-assisted molecular beam epitaxy on sapphire (006) and Si (111) substrates. Their crystal structures are characterized by x-ray diffraction spectroscopy. The nonresonant and resonant Raman spectra were measured using 488 nm line from Ar+ laser and 325 nm line from He-Cd laser by backscattering geometry. Four Raman modes (E2 high LO TO multiphonon processes) were observed in the nonresonant Raman spectra of hexagonal MgxZn1-xO with different Mg contents. The optical phonon frequencies were found to display one-mode behaviour for all the samples since no separate ZnO- and MgO-like modes were observed. The long-wavelength frequencies of ZnO-like optical phonons measured in the resonant Raman spectra can be expressed as linear functions of x. These behaviours can be explained within a modified random-element-isodisplacement model (MREI). 2006 WILEY-VCH Verlag GmbH Co. KGaA.
	High temperature annealing behaviors of luminescent SIOx : H films 会议论文 OAI收割 symposium e on luminescent materials at the 1999 mrs spring meeting, san francisco, ca, apr 05-08, 1999 Ma ZX; Xiang XB; Sheng SR; Liao XB; Shao CL; Umeno M 收藏 \| 浏览/下载：11/0 \| 提交时间：2010/10/29 RAMAN-SPECTRA SILICON PHOTOLUMINESCENCE