机构

• 合肥物质科学研究院 [9]
• 生态环境研究中心 [4]
• 数学与系统科学研究院 [2]
• 深圳先进技术研究院 [1]
• 宁波材料技术与工程研... [1]

采集方式

• OAI收割 [17]

内容类型

• 期刊论文 [14]
• 专利 [3]

发表日期

• 2019 [1]
• 2018 [1]
• 2017 [3]
• 2016 [5]
• 2014 [2]
• 2011 [1]
• 更多

学科主题

筛选

浏览/检索结果: 共17条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Hydrothermal synthesis of MoS2 nanosheet loaded TiO2 nanoarrays for enhanced visible light photocatalytic applications 期刊论文  OAI收割 RSC ADVANCES, 2019, 卷号: 9, 期号: 6, 页码: 3479-3485 作者:  Zhang, Miao;  Wang, Shun;  Li, Ziliang;  Liu, Chunwang;  Miao, Rui   |  收藏  |  浏览/下载：20/0  |  提交时间：2020/05/21 Interface Modulation and Optimization of Electrical Properties of HfGdO/GaAs Gate Stacks by ALD-Derived Al2O3 Passivation Layer and Forming Gas Annealing 期刊论文  OAI收割 ADVANCED ELECTRONIC MATERIALS, 2018, 卷号: 4, 期号: 4, 页码: 9 作者:  Jiang, Shanshan;  He, Gang;  Liu, Mao;  Zhu, Li;  Liang, Shuang   |  收藏  |  浏览/下载：70/0  |  提交时间：2019/06/10 electrical properties  forming gas annealing  high-k gate dielectrics  interface chemistry  metal-oxide-semiconductor capacitors   Interface chemistry and electronic structure of ALD-derived HfAlO/Ge gate stacks revealed by X-ray photoelectron spectroscopy 期刊论文  OAI收割 JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 716, 期号: 无, 页码: 1-6 作者:  He, Gang;  Jiang, Shanshan;  Li, Wendong;  Zheng, Changyong;  He, Huaxin 收藏  |  浏览/下载：44/0  |  提交时间：2018/05/25 High-k Gate Dielectric  Atomic-layer-deposition  Interface Stability  Phase Separation  Annealing Temperature   Explicit symplectic methods for solving charged particle trajectories 期刊论文  OAI收割 PHYSICS OF PLASMAS, 2017, 卷号: 24, 期号: 5, 页码: 10 作者:  Zhou, Zhaoqi;  He, Yang;  Sun, Yajuan;  Liu, Jian;  Qin, Hong   |  收藏  |  浏览/下载：21/0  |  提交时间：2018/07/30 Explicit K-symplectic algorithms for charged particle dynamics 期刊论文  OAI收割 PHYSICS LETTERS A, 2017, 卷号: 381, 期号: 6, 页码: 568-573 作者:  He, Yang;  Zhou, Zhaoqi;  Sun, Yajuan;  Liu, Jian;  Qin, Hong   |  收藏  |  浏览/下载：31/0  |  提交时间：2018/07/30 Lorentz force equation  K-symplectic integrator  Splitting method  Hamiltonian splitting  Energy preservation   Annealing Temperature Dependent Electrical Properties and Leakage Current Transport Mechanisms in Atomic Layer Deposition-Derived Al2O3-Incorporated HfO2/Si Gate Stack 期刊论文  OAI收割 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2016, 卷号: 16, 期号: 8, 页码: 8075-8082 作者:  Gao, Juan;  He, Gang;  Zhang, Jiwen;  Chen, Xuefei;  Jin, Peng 收藏  |  浏览/下载：26/0  |  提交时间：2017/11/21 High-k Gate Dielectric  Atomic Layer Deposition  Electrical Properties  Leakage Current Mechanism   Modification of electrical properties and carrier transportation mechanism of ALD-derived HfO2/Si gate stacks by Al2O3 incorporation 期刊论文  OAI收割 JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 667, 期号: 无, 页码: 352-358 作者:  Gao, Juan;  He, Gang;  Sun, Zhaoqi;  Chen, Hanshuang;  Zheng, Changyong 收藏  |  浏览/下载：27/0  |  提交时间：2017/10/18 High-k Gate Dielectric  Atomic-layer-deposition  Electrical Properties  Carrier Transportation Mechanism  Incorporation   Microstructure, optical, electrical properties, and leakage current transport mechanism of sol-gel-processed high-k HfO2 gate dielectrics 期刊论文  OAI收割 CERAMICS INTERNATIONAL, 2016, 卷号: 42, 期号: 6, 页码: 6761-6769 作者:  Jin, Peng;  He, Gang;  Xiao, Dongqi;  Gao, Juan;  Liu, Mao 收藏  |  浏览/下载：23/0  |  提交时间：2017/10/18 High-k Gate Dielectrics  Sol-gel  Electrical Properties  Leakage Current Transport Mechanism  Optical Properties   Evolution of interface chemistry and dielectric properties of HfO2/Ge gate stack modulated by Gd incorporation and thermal annealing 期刊论文  OAI收割 AIP ADVANCES, 2016, 卷号: 6, 期号: 2, 页码: 1-7 作者:  He, Gang;  Zhang, Jiwen;  Sun, Zhaoqi;  Lv, Jianguo;  Chen, Hanshuang 收藏  |  浏览/下载：9/0  |  提交时间：2017/09/15 Microstructure, optical and electrical properties of solution-derived peroxo-zirconium oxide gate dielectrics for CMOS application 期刊论文  OAI收割 CERAMICS INTERNATIONAL, 2016, 卷号: 42, 期号: 1, 页码: 759-766 作者:  Dongqi Xiao;  Gang He;  Zhaoqi Sun;  Jianguo Lv;  Peng Jin 收藏  |  浏览/下载：21/0  |  提交时间：2017/10/18