中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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Thermal stability and interface improvement of thin NiSiGe by C+ ion implantation 期刊论文  OAI收割
2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011.2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011, 2011, 期号: 0
Zhang, B; Yu, W; Zhao, QT; Buca, D; Hollä; nder, B; Hartmann, J.-M.; Zhang, M; Wang, X; Mantl, S.
收藏  |  浏览/下载:15/0  |  提交时间:2012/08/28
Tunneling field-effect transistor with a strained Si channel and a Si 0.5Ge0.5 source 期刊论文  OAI收割
European Solid-State Device Research Conference.ESSDERC 2011 - Proceedings of the 41st European Solid-State Device Research Conference, 2011, 期号: 0, 页码: 251-254
Zhao, QT; Yu, WJ; Zhang, B; Schmidt, M.; Richter, S.; Buca, D.; Hartmann, J.-M.; Luptak, R.; Fox, A.; Bourdelle, K.K.; Mantl, S.
收藏  |  浏览/下载:23/0  |  提交时间:2012/08/28