中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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浏览/检索结果: 共6条,第1-6条 帮助

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Large-Scale DES Analysis of Unsteady Flow Field in a Multi-Stage Axial Flow Compressor at Off-Design Condition Using K Computer 会议论文  OAI收割
ASME, 2015
作者:  
Kazutoyo Yamada;  Masato Furukawa;  Satoshi Nakakido;  Akinori Matsuoka;  Kentaro Nakayama
收藏  |  浏览/下载:10/0  |  提交时间:2016/01/24
Effect of nickel diffusion on the microstructure of Gd-doped ceria (GDC) electrolyte film supported by Ni-GDC cermet anode 期刊论文  OAI收割
solid state ionics, 2010, 卷号: 181, 期号: 13-14, 页码: 646-652
作者:  
Ye, Fei;  Mori, Toshiyuki;  Ou, Ding Rong;  Zou, Jin;  Drennan, John
收藏  |  浏览/下载:24/0  |  提交时间:2015/11/12
Effect of nickel diffusion on the microstructure of Gd-doped ceria (GDC) electrolyte film supported by Ni-GDC cermet anode 期刊论文  OAI收割
solid state ionics, 2010, 卷号: 181, 期号: 13-14, 页码: 646-652
作者:  
Ye, Fei;  Mori, Toshiyuki;  Ou, Ding Rong;  Zou, Jin;  Drennan, John
收藏  |  浏览/下载:14/0  |  提交时间:2015/11/12
Semiconductor laser device and method for fabricating the same 专利  OAI收割
专利号: US7704759, 申请日期: 2010-04-27, 公开日期: 2010-04-27
作者:  
TAKAYAMA, TORU;  MURASAWA, SATOSHI;  FUJIMOTO, YASUHIRO;  NAKAYAMA, HISASHI;  KIDOGUCHI, ISAO
  |  收藏  |  浏览/下载:15/0  |  提交时间:2020/01/13
Semiconductor light emitting device, its manufacturing method and optical recording and/or reproducing apparatus 专利  OAI收割
专利号: US5898662, 申请日期: 1999-04-27, 公开日期: 1999-04-27
作者:  
ISHIBASHI, AKIRA;  TANIGUCHI, SATOSHI;  HINO, TOMONORI;  KOBAYASHI, TAKASHI;  NAKANO, KAZUSHI
  |  收藏  |  浏览/下载:25/0  |  提交时间:2019/12/24
Semiconductor laser 专利  OAI收割
专利号: US5640409, 申请日期: 1997-06-17, 公开日期: 1997-06-17
作者:  
ITO, SATOSHI;  OHATA, TOYOHARU;  ISHIBASHI, AKIRA;  NAKAYAMA, NORIKAZU
  |  收藏  |  浏览/下载:67/0  |  提交时间:2020/01/18