机构

• 金属研究所 [2]
• 半导体研究所 [2]

采集方式

• iSwitch采集 [2]
• OAI收割 [2]

内容类型

• 期刊论文 [4]

发表日期

• 2011 [2]
• 2009 [2]

学科主题

筛选

浏览/检索结果: 共4条，第1-4条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Defect properties of as-grown and electron-irradiated te-doped gasb studied by positron annihilation 期刊论文  iSwitch采集 Semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: 6 作者:  Li Hui;  Zhou Kai;  Pang Jingbiao;  Shao Yundong;  Wang Zhu 收藏  |  浏览/下载：25/0  |  提交时间：2019/05/12 Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation 期刊论文  OAI收割 SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2011, 卷号: 26, 期号: 7, 页码: 6 作者:  Li Hui;  Zhou Kai;  Pang Jingbiao;  Shao Yundong;  Wang Zhu   |  收藏  |  浏览/下载：13/0  |  提交时间：2021/02/02 Proton irradiation-induced defects in undoped gasb studied by positron lifetime spectroscopy and photoluminescence 期刊论文  iSwitch采集 Journal of optoelectronics and advanced materials, 2009, 卷号: 11, 期号: 8, 页码: 1122-1126 作者:  Li, Hui;  Wang, Zhu;  Zhou, Kai;  Pang, Jingbiao 收藏  |  浏览/下载：18/0  |  提交时间：2019/05/12 Gasb  Proton irradiation  Defects  Positron lifetime  Photoluminescence   Proton irradiation-induced defects in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence 期刊论文  OAI收割 JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2009, 卷号: 11, 期号: 8, 页码: 1122-1126 作者:  Li, Hui;  Wang, Zhu;  Zhou, Kai;  Pang, Jingbiao;  Ke, Junyu   |  收藏  |  浏览/下载：10/0  |  提交时间：2021/02/02 GaSb  Proton irradiation  Defects  Positron lifetime  Photoluminescence