中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页 机构 成果 学者
  
  1. CAS IR Grid
机构
采集方式
内容类型
发表日期
学科主题
筛选

浏览/检索结果: 共87条，第1-10条 帮助

条数/页： 排序方式：
1/f Noise responses of Ultra-Thin Body and Buried oxide FD-SOI PMOSFETs under total ionizing dose irradiation 期刊论文  OAI收割
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2022, 卷号: 176, 期号: 11-12, 页码: 1202-1214
作者:  Zhang, RQ (Zhang, Ruiqin) [1] , [2] , [3];  Zheng, QW (Zheng, Qiwen) [1] , [2];  Lu, W (Lu, Wu) [1] , [2];  Cui, JW (Cui, Jiangwei) [1] , [2];  Li, YD (Li, Yudong) [1] , [2]
  |  收藏  |  浏览/下载：37/0  |  提交时间：2022/04/07
Single event transient effect of frontside and backside illumination image sensors under proton irradiation 期刊论文  OAI收割
ACTA PHYSICA SINICA, 2022, 卷号: 71, 期号: 5, 页码: 1-9
作者:  Fu, J (Fu Jing) [1] , [2] , [3];  Cai, YL (Cai Yu-Long) [4];  Li, YD (Li Yu-Dong) [1] , [2];  Feng, J (Feng Jie) [1] , [2];  Wen, L (Wen Lin) [1] , [2]
  |  收藏  |  浏览/下载：44/0  |  提交时间：2022/06/06
Prospects for detecting the diffuse supernova neutrino background with JUNO 期刊论文  OAI收割
JOURNAL OF COSMOLOGY AND ASTROPARTICLE PHYSICS, 2022, 期号: 10
作者:  Abusleme, A;  Adam, T;  Ahmad, S;  Ahmed, R;  Aiello, S
  |  收藏  |  浏览/下载：41/0  |  提交时间：2023/03/27
Analysis of Dark Signal Degradation Caused by 1 MeV Neutron Irradiation on Backside-Illuminated CMOS Image Sensors 期刊论文  OAI收割
CHINESE JOURNAL OF ELECTRONICS, 2021, 卷号: 30, 期号: 1, 页码: 180-184
作者:  Liu, BK (Liu Bingkai)[ 1,2,3 ];  Li, YD (Li Yudong)[ 1,2 ];  Wen, L (Wen Lin)[ 1,2 ];  Zhou, D (Zhou Dong)[ 1,2 ];  Feng, J (Feng Jie)[ 1,2 ]
  |  收藏  |  浏览/下载：35/0  |  提交时间：2021/05/10
Mechanism of Ionization Damage in Large Eight-Transistor Complementary Metal-Oxide-Semiconductor Color Image Sensors 期刊论文  OAI收割
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2021, 卷号: 16, 期号: 11, 页码: 1755-1761
作者:  Feng, J (Feng, Jie) [1] , [2];  Fu, J (Fu, Jing) [1] , [2] , [3];  Li, YD (Li, Yu-Dong) [1] , [2];  Wen, L (Wen, Lin) [1] , [2];  Guo, Q (Guo, Qi) [1] , [2]
  |  收藏  |  浏览/下载：20/0  |  提交时间：2022/03/24
Impact of TID on Within-Wafer Variability of Radiation-Hardened SOI Wafers 期刊论文  OAI收割
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 7, 页码: 1423-1429
作者:  Zheng, QW (Zheng, Qiwen) 1;  Cui, JW (Cui, Jiangwei) 1;  Yu, XF (Yu, Xuefeng) 1;  Li, YD (Li, Yudong) 1;  Lu, W (Lu, Wu) 1
  |  收藏  |  浏览/下载：42/0  |  提交时间：2021/08/06
Role of the oxide trapped charges in charge coupled device ionizing radiation-induced dark signal 期刊论文  OAI收割
RADIATION PHYSICS AND CHEMISTRY, 2021, 卷号: 189, 期号: 12, 页码: 1-5
作者:  Li, YD (Li, Yudong);  Liu, BK (Liu, Bingkai);  Wen, L (Wen, Lin);  Wei, Y (Wei, Ying);  Zhou, D (Zhou, Dong)
  |  收藏  |  浏览/下载：49/0  |  提交时间：2021/10/14
Measurement and Evaluation of the Within-Wafer TID Response Variability on BOX Layer of SOI Technology 期刊论文  OAI收割
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 10, 页码: 2516-2523
作者:  Zheng, QW (Zheng, Qiwen) 1Cui, JW (Cui, Jiangwei) 1Yu, XF (Yu, Xuefeng) 1;  Li, YD (Li, Yudong) 1;  Lu, W (Lu, Wu) 1;  He, CF (He, Chengfa) 1;  Guo, Q (Guo, Qi) 1
  |  收藏  |  浏览/下载：40/0  |  提交时间：2021/12/06
Displacement damage effects induced by fast neutron in backside-illuminated CMOS image sensors 期刊论文  OAI收割
JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY, 2020, 卷号: 57, 期号: 9, 页码: 1015-1021
作者:  Zhang, X (Zhang, Xiang)[ 1,2,3 ];  Li, YD (Li, Yudong)[ 1,2 ];  Wen, L (Wen, Lin)[ 1,2 ];  Feng, J (Feng, Jie)[ 1,2 ];  Zhou, D (Zhou, Dong)[ 1,2 ]
  |  收藏  |  浏览/下载：17/0  |  提交时间：2020/12/09
A study of hot pixels induced by proton and neutron irradiations in charge coupled devices 期刊论文  OAI收割
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2020, 卷号: 175, 期号: 5-6, 页码: 540-550
作者:  Liu, BK (Liu, Bingkai)[ 1,2,3 ];  Li, YD (Li, Yudong)[ 1,2 ];  Wen, L (Wen, Lin)[ 1,2 ];  Zhou, D (Zhou, Dong)[ 1,2 ];  Feng, J (Feng, Jie)[ 1,2 ]
  |  收藏  |  浏览/下载：29/0  |  提交时间：2020/07/06