中国科学院机构知识库网格系统: 检索

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	Impacts of growth orientation and N incorporation on the interface-states and the electrical characteristics of Cu/GaAsN Schottky barrier diodes 期刊论文 OAI收割 Physica B: Condensed Matter, 2017, 卷号: 527, 页码: 52-56 作者: Li J(李健); Han XX(韩修训); Gao, Xin; Yoshio Ohshita; Han XX(韩修训) \| 收藏 \| 浏览/下载：24/0 \| 提交时间：2017/12/18 Gaasn Schottky Barrier Diodes (Sbds) Growth Orientation C-v And G/ω-v Characteristics Interface States
	Electrical characterization of Cu Schottky contacts to n-type GaAsN grown on (311)A/B GaAs substrates 期刊论文 OAI收割 Journal of Alloys and Compounds, 2016, 卷号: 657, 页码: 325-329 作者: Dong C(董琛); Han XX(韩修训); Gao, Xin; Yoshio Ohshita; Masafumi Yamaguchi 收藏 \| 浏览/下载：25/0 \| 提交时间：2015/12/30 GaAsN Schottky diode Growth orientation I-V characteristics C-V characteristics Electrical properties
	Impact of the substrate orientation on the N incorporation in GaAsN: Theoretical and experimental investigations 期刊论文 OAI收割 Journal of Alloys and Compounds, 2016, 卷号: 687, 页码: 42-46 作者: Li J(李健); Han XX(韩修训); Dong C(董琛); Fan ZZ(范长增); Yoshio Ohshita 收藏 \| 浏览/下载：26/0 \| 提交时间：2016/10/25 GaAsN First principle calculation N incorporation Growth orientation Chemical potentials
	Growth orientation dependence of Si doping in GaAsN 期刊论文 OAI收割 Journal of Applied Physics, 2015, 卷号: 117, 期号: 5, 页码: 055706(1-4) 作者: Han XX(韩修训); Dong C(董琛); Feng, Qiang; Ohshita, Yoshio; Yamaguchi, Masafumi 收藏 \| 浏览/下载：39/0 \| 提交时间：2015/12/30
	Effects of a key deep level and interface states on the performance of GaAsN solar cells: a simulation analysis 期刊论文 OAI收割 Semiconductor Science and Technology, 2012, 卷号: 27, 期号: 10, 页码: 105013(1-6) 作者: Han, Xiuxun; Hwang, Jong-Ha; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi 收藏 \| 浏览/下载：16/0 \| 提交时间：2013/12/17