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浏览/检索结果: 共127条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Impact of TID on Within-Wafer Variability of Radiation-Hardened SOI Wafers 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 7, 页码: 1423-1429 作者:  Zheng, QW (Zheng, Qiwen) 1;  Cui, JW (Cui, Jiangwei) 1;  Yu, XF (Yu, Xuefeng) 1;  Li, YD (Li, Yudong) 1;  Lu, W (Lu, Wu) 1   |  收藏  |  浏览/下载：42/0  |  提交时间：2021/08/06 Radiation-hardened (RH)silicon-on-insulator (SOI)total ionizing dose (TID)within-wafer variability   Measurement and Evaluation of the Within-Wafer TID Response Variability on BOX Layer of SOI Technology 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 10, 页码: 2516-2523 作者:  Zheng, QW (Zheng, Qiwen) 1Cui, JW (Cui, Jiangwei) 1Yu, XF (Yu, Xuefeng) 1;  Li, YD (Li, Yudong) 1;  Lu, W (Lu, Wu) 1;  He, CF (He, Chengfa) 1;  Guo, Q (Guo, Qi) 1   |  收藏  |  浏览/下载：41/0  |  提交时间：2021/12/06 Threshold voltage  TestingMOSFET circuits  Transistors  Standards  Logic gates  Fluctuations  Buried oxide (BOX)  silicon-on-insulator (SOI)  total ionizing dose (TID)   Study of the influence of gamma irradiation on long-term reliability of SiC MOSFET 期刊论文  OAI收割 RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2020, 卷号: 175, 期号: 5-6, 页码: 559-566 作者:  Liang, XW (Liang, Xiaowen)[ 1,2,3 ];  Cui, JW (Cui, Jiangwei)[ 1,2 ];  Zheng, QW (Zheng, Qiwen)[ 1,2 ];  Zhao, JH (Zhao, Jinghao)[ 1,2,3 ];  Yu, XF (Yu, Xuefeng)[ 1,2 ]   |  收藏  |  浏览/下载：30/0  |  提交时间：2020/12/11 SiC MOSFET  total ionizing dose irradiation  time-dependent dielectric breakdown   Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 4, 页码: 702-709 作者:  Zheng, QW (Zheng, Qiwen)[ 1 ];  Cui, JW (Cui, Jiangwei)[ 1 ];  Xu, LW (Xu, Liewei)[ 2 ];  Ning, BX (Ning, Bingxu)[ 3 ];  Zhao, K (Zhao, Kai)[ 3 ]   |  收藏  |  浏览/下载：118/0  |  提交时间：2019/05/14 Back-gate biasing  forward body bias (FBB)  total ionizing dose (TID)  ultrathin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI)   Database Resources of the BIG Data Center in 2019 期刊论文  OAI收割 NUCLEIC ACIDS RESEARCH, 2019, 卷号: 47, 期号: D1, 页码: D8-D14 作者:  Zhang, Z;  Zhao, WM;  Xiao, JF;  Bao, YM;  Wang, F   |  收藏  |  浏览/下载：139/0  |  提交时间：2019/11/04 Structural and electronic properties of atomically thin Bismuth on Au(111) 期刊论文  OAI收割 SURFACE SCIENCE, 2019, 卷号: 679, 期号: -, 页码: 147—153 作者:  He, BC;  Tian, G;  Gou, J;  Liu, BX;  Shen, KC   |  收藏  |  浏览/下载：77/0  |  提交时间：2019/12/30 ULTRAVIOLET PHOTOEMISSION  EPITAXIAL GRAPHENE  MOLECULES  MONOLAYERS  SYSTEMS  GROWTH   A study on effects of total ionizing dose on hot carrier effect of PD I/O SOI PMOSFETs 期刊论文  OAI收割 RESULTS IN PHYSICS, 2019, 卷号: 13, 期号: 6, 页码: 1-5 作者:  Zhao, JH (Zhao, Jinghao)[ 1,2,3 ];  Zheng, QW (Zheng, Qiwen)[ 1,2 ];  Cui, JW (Cui, Jiangwei)[ 1,2 ];  Zhou, H (Zhou, Hang)[ 1,2,3 ];  Liang, XW (Liang, Xiaowen)[ 1,2,3 ]   |  收藏  |  浏览/下载：10/0  |  提交时间：2020/03/20 Hot carrier effect  PMOS  Total ionizing dose effect   B,N-Doped Defective Carbon Entangled Fe3C Nanoparticles as the Superior Oxygen Reduction Electrocatalyst for Zn-Air Batteries 期刊论文  OAI收割 ACS SUSTAINABLE CHEMISTRY & ENGINEERING, 2019, 卷号: 7, 期号: 23, 页码: 19104-19112 作者:  Zhang, GY;  Liu, X;  Wang, L;  Sun, FF;  Yang, YQ   |  收藏  |  浏览/下载：27/0  |  提交时间：2020/10/16 DOPED POROUS CARBON  BIFUNCTIONAL ELECTROCATALYST  EFFICIENT  CATALYST  BIOMASS  NANOFIBERS  NANOSHEETS  ALKALINE  GRAPHENE  ROBUST   Bias Dependence of Radiation-Induced Narrow-Width Channel Effects in 65 nm NMOSFETs 期刊论文  OAI收割 CHINESE PHYSICS LETTERS, 2018, 卷号: 35, 期号: 4, 页码: 1-4 作者:     |  收藏  |  浏览/下载：41/0  |  提交时间：2018/05/07 Investigating the TDDB lifetime growth mechanism caused by proton irradiation in partially depleted SOI devices 期刊论文  OAI收割 MICROELECTRONICS RELIABILITY, 2018, 卷号: 81, 期号: 2, 页码: 112-116 作者:  Ma, T (Ma, Teng);  Yu, XF (Yu, Xuefeng);  Cui, JW (Cui, Jiangwei);  Zheng, QW (Zheng, Qiwen);  Zhou, H (Zhou, Hang)   |  收藏  |  浏览/下载：65/0  |  提交时间：2018/03/14 Reliability  Proton Irradiation  Radiation Induced Leakage Current (Rilc)  Time-dependent Dielectric Breakdown (Tddb)  Total Ionizing Does (Tid)