中国科学院机构知识库网格系统: 检索

浏览/检索结果: 共4条，第1-4条

帮助

条数/页：排序方式：
	一种制备α-Fe2O3纳米球的方法专利 OAI收割专利类型: 发明, 专利号: CN201210323134.8, 申请日期: 2013-05-01, 公开日期: 2013-05-01 作者: 邢荣娥; 于华华; 李鹏程; 秦玉坤收藏 \| 浏览/下载：47/0 \| 提交时间：2014/08/04 一种制备α‑Fe2O3纳米球的方法其中 2）将上述微波处理后产物自然冷却后离心其特征在于：1）以六水合三氯化铁（FeCl3·6H2O）为铁源六水合三氯化铁与尿素摩尔比为1:1‑1.5 所得沉淀采用乙醇和水进行交替洗涤尿素（CO(NH2)2）为氢氧根离子引发剂铁源浓度为1.0‑1.5mol/L 洗涤后干燥将铁源与引发剂利用超声溶解于甘油和水组成的混合溶剂中甘油和水体积比为1:2‑9 即得平均直径300‑500nm 而后置于密闭条件下进行微波处理整体结构由尺寸约20‑50nm的棒状纳米亚单元构成的α‑Fe2O3纳米球。在130‑150℃进行微波处理20‑50min
	Effects of surface roughness and film thickness on the adhesion of a bioinspired nanofilm 期刊论文 OAI收割 Physical Review E, 2011, 卷号: 83, 期号: 5, 页码: 51915 作者: Peng ZL(彭志龙); Chen SH(陈少华) 收藏 \| 浏览/下载：31/0 \| 提交时间：2012/04/01 Embedded-Atom Potentials Elastic Solids Dispersion Forces 130 Nm Gecko Friction Contact Attachment Detachment Substrate
	Manufacturing and testing of the line-array fiber-optic image slicer based on silicon V-grooves (EI CONFERENCE) 会议论文 OAI收割 MEMS/MOEMS Technologies and Applications III, November 12, 2007 - November 14, 2007, Beijing, China 作者: Zhu Y. 收藏 \| 浏览/下载：29/0 \| 提交时间：2013/03/25 Linear fiber-optic image slicer is used more and more in spatial exploration and imaging system. In this paper a plane arranging method of fiber-optic array based on Si-V grooves is established in order to improve the accuracy and reduce the cost of manufacturing. Firstly the Si-V groove array is micro-machined with anisotropic etching process then optical fibers are placed in the grooves orderly with plane arranging method. Secondly the end surfaces of the device are polished also the linear fiber-optic image slicer is packaged. Finally some parameters are tested including structure parameters transmittivity and vibration test. Experimental results indicate that the maximum error accumulated in 2000 periods of the Si-V grooves is 0.5 m the error of the height in Si-V grooves is less than 0.15m the roughness of the end surface is less than 0.9nm. The transmittivity of the linear fiber-optic image slicer that without optical film is 51.46% at the wavelength of 632.8nm. After random vibration experiment the ratio of the broken fiber increased by 0.1%. While the temperature reached 320C the stress of epoxy will be 130Mpa which is close to the limit resistance stress of 139Mpa some cracks appeared.
	Characteristics of ZnMgO-based metal-semiconductor-metal photodetectors (EI CONFERENCE) 会议论文 OAI收割 International Symposium on Photoelectronic Detection and Imaging, ISPDI 2007: Photoelectronic Imaging and Detection, September 9, 2007 - September 12, 2007, Beijing, China 作者: Zhang J.; Li B.; Li B.; Li B.; Zhao Y. 收藏 \| 浏览/下载：25/0 \| 提交时间：2013/03/25 In recent years ZnMgO semiconductor alloys with a direct bandgap tunable between 3.37 eV and 7.8 eV become one of the most suitable materials for the fabrication of ultraviolet detectors. In this paper we have fabricated metal-semiconductor-metal photodetectors on 1-m thick Zn 0.8Mg0.2O films. The interdigital metal electrodes are 500 m long and 5 m wide with an interelectrode spacing 2 m 5 m and 10 m respectively. Zn0.8Mg0.2O films were grown on quartz by ratio frequency magnetron sputtering at 500C. Dark current spectral responsivity and pulse response were carried out for the devices with different finger pitches. All the photodetectors showed the peak responsivity at 330 nm and the ultraviolet-visible rejection ratio (R330 nm/R400 nm) is more than four orders of magnitude at 3 V bias. For the device with 2 m finger pitch the detectivity was calculated as 4.21011 cm Hz 1/2/W at 330 nm. Furthermore the transient response measurement for all devices revealed similar rise time of 10 ns. The 90%-10% fall times are 130 ns 170 ns and 230 ns for the devices with different finger pitches of 2 m 5 m and 10 m respectively..