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	808 nm broad-area laser diodes designed for high efficiency at high-temperature operation 期刊论文 OAI收割 SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2021, 卷号: 36, 期号: 10 作者: Lan, Yu; Yang, Guowen; Liu, Yuxian; Zhao, Yuliang; Wang, Zhenfu \| 收藏 \| 浏览/下载：49/0 \| 提交时间：2021/10/08 semiconductor laser laser diode high power high efficiency 808 nm
	Amplifying Nanoparticle Targeting Performance to Tumor via Diels-Alder Cycloaddition 期刊论文 OAI收割 ADVANCED FUNCTIONAL MATERIALS, 2018, 卷号: 28, 期号: 30 作者: Lu, GH; Li, F; Zhang, F; Huang, LL; Zhang, LJ \| 收藏 \| 浏览/下载：41/0 \| 提交时间：2018/12/29 Diels-alder Cycloaddition 808-nm Diode-laser Ph (Low) Insertion Peptide In-vivo Photothermal Therapy Click Chemistry Tumor Targeting Drug-delivery Two-step Strategy Bioorthogonal Chemistry Indocyanine Green Cancer Heterogeneity Therapy Peptide
	Structural amelioration of 920 nm optically pumped semiconductor vertical external-cavity surface emitting laser (OPS-VECSEL) (EI CONFERENCE) 会议论文 OAI收割 2nd International Conference on Energy, Environment and Sustainable Development, EESD 2012, October 12, 2012 - October 14, 2012, Jilin, China 作者: Liu Y.; Liu Y.; Wang L.; Wang L.; Wang L. 收藏 \| 浏览/下载：18/0 \| 提交时间：2013/03/25 920 nm optically pumped semiconductor vertical external-cavity surface emitting laser (OPS-VECSEL) has an important application in laser display. We constructed and optimized a 920 nm OPS-VECSEL with active region of In0.09Ga0.91As quantum well (QW) system pumped by 808 nm laser diode module. By the finite element method self-consistent solutions of the semiconductor electronic and optical equations are realized to calculate the characteristics parameters of OPS-VECSEL. The performances of device especially the mode the threshold and the optical-optical translation efficiency were analyzed by dealing with different number of QWs (1 2 and 3) in one period QW depth barrier width the component and dimension of the non-absorption layer. We chose an improved structure of them. On this basis we ameliorated the number of QW periods and the simulation showed that in order to obtain high performance device the choice of the number of QW periods must be cautious. (2013) Trans Tech Publications Switzerland.
	KW-output high beam quality diode laser array source (EI CONFERENCE) 会议论文 OAI收割 2012 International Conference on Optoelectronics and Microelectronics, ICOM 2012, August 23, 2012 - August 25, 2012, Changchun, China 作者: Zhang J.; Wang L.; Wang L.; Wang L.; Liu Y. 收藏 \| 浏览/下载：35/0 \| 提交时间：2013/03/25 With the advantages of small volume light weight high efficiency and long lifespan diode laser has been widely applied to industrial processing. Presently for laser used as processing light source needs to amount to dozens of KW per cm2 of power density how to increase power output and get smaller light spot for diode laser becomes a key problem. It is introduced that by designing beam shaping by ourselves and making use of optical system for beam blooming and focusing 808nm laser array composed of 20 bars eventually achieves the 1001.5w power output coupling efficiency at 90% 11mm2 of light spot through experiments which enables diode laser to be directly applied to cladding welding and so on. 2012 IEEE.
	Analysis of laser jamming to satellite-based detector (EI CONFERENCE) 会议论文 OAI收割 International Symposium on Photoelectronic Detection and Imaging 2009: Laser Sensing and Imaging, June 17, 2009 - June 19, 2009, Beijing, China 作者: Guo L.-H.; Guo R.-H.; Wang S.-W. 收藏 \| 浏览/下载：29/0 \| 提交时间：2013/03/25 The reconnaissance satellite communication satellite and navigation satellite used in the military applications have played more and more important role in the advanced technique wars and already become the significant support and aid system for military actions. With the development of all kinds of satellites anti-satellite laser weapons emerge as the times require. The experiments and analyses of laser disturbing CCD (charge coupled detector) in near ground have been studied by many research groups but their results are not suitable to the case that using laser disturbs the satellite-based detector. Because the distance between the satellite-based detector and the ground is very large it is difficult to damage it directly. However the optical receive system of satellite detector has large optical gain so laser disturbing satellite detector is possible. In order to determine its feasibility the theoretical analyses and experimental study are carried out in the paper. Firstly the influence factors of laser disturbing satellite detector are analyzed in detail which including laser power density on the surface of the detector after long distance transmission and laser power density threshold for disturbing etc. These factors are not only induced by the satellite orbit but dependence on the following parameters: laser average power in the ground laser beam quality tracing and aiming precision and atmospheric transmission. A calculation model is developed by considering all factors which then the power density entering into the detector can be calculated. Secondly the laser disturbing experiment is performed by using LD (laser diode) with the wavelength 808 nm disturbing CCD 5 kilometer away which the disturbing threshold value is obtained as 3.5510-4mW/cm2 that coincides with other researcher's results. Finally using the theoretical model the energy density of laser on the photosensitive surface of MSTI-3 satellite detector is estimated as about 100mW/cm2 which is largely exceed the disturbing threshold and therefore verify the feasibility of using this kind of laser disturbing the satellite-based detector. According to the results. using the similar laser power density absolutely saturate the requirements to laser disturbing satellite-based detector. If considering the peak power of pulsed laser even decrease laser average power it is also possible to damage the detector. This result will provide the reliable evidences to evaluate the effect of laser disturbing satellite-based detector. 2009 SPIE.
	High power diode laser with beam coupling (EI CONFERENCE) 会议论文 OAI收割 Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China 作者: Wang L.; Liu Y.; Wang L.; Liu Y.; Liu Y. 收藏 \| 浏览/下载：59/0 \| 提交时间：2013/03/25 As the increasing applications of the semiconductor lasers in the laser processing the single 2-D stack optic-power density has not satisfied the actual requirements. It demands to couple several diode laser stack beams to one to improve the brightness and it becomes the central issue to adopt the appropriate beam coupling technology which would offer high quality and high efficiency. In this paper it mainly introduces the beam shaping and the technology of spatial coupling polarization coupling and wavelength coupling. The coupling key elements are presented and indicated. Finally the development of the diode laser on beam coupling in our country fell behind through analyzing the statement of the world. Our lab is studying on polarization coupling and wavelength coupling. We gain some results by phase which the polarization coupling efficiency can achieve 90% for two LD stacks with seven bars whose luminous wavelength is 975nm and980nm.By two 808nm diode laser coupling the efficiency of 60% can be achieved after focusing to the beam size of 22mm2. 2008 SPIE.
	Vertical-external-cavity surface-emitting lasers: Numerical simulation, and characterization (EI CONFERENCE) 会议论文 OAI收割 Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China 作者: Qin L. 收藏 \| 浏览/下载：26/0 \| 提交时间：2013/03/25 Firstly the vertical external-cavity surface-emiting lasers (VECSELs) device structure and model was given and the output characteristic was simple calculated. Then in experiment the VECSELs were grown bonded on to the heat sink and optically pumped by high-power 808nm diode laser array with fiber output module the light emission spectra were measured. Finally The thermal characteristic of the VECSELs was investigated by changing the temperature of the substrate. 2008 SPIE.
	808nm high-power high-efficiency GaAsP/GaInP laser bars (EI CONFERENCE) 会议论文 OAI收割 Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China 作者: Wang Y.; Wang L.; Wang L.; Wang L.; Liu Y. 收藏 \| 浏览/下载：22/0 \| 提交时间：2013/03/25 808nm high power diode lasers which is rapidly maturing technology technically and commercially since the introduction in 1999 of complete kilowatt-scale diode laser systems have important applications in the fields of industry and pumping solid-state lasers (DPSSL). High power and high power conversion efficiency are extremely important in diode lasers and they could lead to new applications where space weight and electrical power are critical. High efficiency devices generate less waste heat which means less strain on the cooling system and more tolerance to thermal conductivity variation a lower junction temperature and longer lifetimes. Diode lasers with Al-free materials have superior power conversion efficiency compared with conventional AlGaAs/GaAs devices because of their lower differential series resistance and higher thermal conductivity. 808nm GaAsP/GalnP broad-waveguide emitting diode laser bars with 1mm cavity length have been fabricated. The peak power can reach to 100.9W at 106.5A at quasicontinuous wave operation (200s 1000Hz). The maximum power conversion efficiency is 57.38%. Based on these high power laser bars we fabricate a 1 3 arrays the maximum power is 64.3 W in continuous wave mode when the current is 25.0A. And the threshold current is 5.9A the slope efficiency is 3.37 W/A. 2008 SPIE.
	1.41 W Nd: YAG laser at 556 nm end-pumped by laser diode arrays (EI CONFERENCE) 会议论文 OAI收割 ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China Jia F.-Q.; Zheng Q.; Xue Q.-H.; Bu Y.-K.; Qian L.-S. 收藏 \| 浏览/下载：15/0 \| 提交时间：2013/03/25 A Nd: YAG laser has longitudinally pumped by a fiber coupling 20 W laser diode array with emission wavelength at 808nm in a three folded cavity configuration. After a 150 m thickness etalon was inserted into the cavity the 1112nm fundamental laser operation was obtained and then intracavity-frequency-doubling with a LBO crystal produced 1.41W of stable output at 556nm.