中国科学院机构知识库网格系统: 检索

808nm半导体激光芯片结构优化与效率特性分析 学位论文 OAI收割
北京: 中国科学院大学, 2020
作者: 常奕栋

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收藏 | 浏览/下载：55/0 | 提交时间：2021/07/05

808nm 半导体激光器 COS 单管光纤耦合模块电光转换效率能量损耗分布

基于LPC2148的808nm大功率半导体激光治疗仪 期刊论文 OAI收割
应用科技, 2012, 期号: 01, 页码: 31-34
作者: 王彪

收藏 | 浏览/下载：26/0 | 提交时间：2013/03/11

LPC2148 808nm大功率激光器半导体激光治疗仪

KW-output high beam quality diode laser array source (EI CONFERENCE) 会议论文 OAI收割
2012 International Conference on Optoelectronics and Microelectronics, ICOM 2012, August 23, 2012 - August 25, 2012, Changchun, China
作者: Zhang J.; Wang L.; Wang L.; Wang L.; Liu Y.

收藏 | 浏览/下载：41/0 | 提交时间：2013/03/25

With the advantages of small volume light weight high efficiency and long lifespan diode laser has been widely applied to industrial processing. Presently for laser used as processing light source needs to amount to dozens of KW per cm2 of power density how to increase power output and get smaller light spot for diode laser becomes a key problem. It is introduced that by designing beam shaping by ourselves and making use of optical system for beam blooming and focusing 808nm laser array composed of 20 bars eventually achieves the 1001.5w power output coupling efficiency at 90% 11mm2 of light spot through experiments which enables diode laser to be directly applied to cladding welding and so on. 2012 IEEE.

808nm high-power semiconductor laser therapeutic apparatus based on LPC2138 (EI CONFERENCE) 会议论文 OAI收割
2011 IEEE International conference on Intelligent Computation and Bio-Medical Instrumentation, ICBMI 2011, December 14, 2011 - December 17, 2011, Wuhan, Hubei, China
作者: Wang B.; Wang B.

收藏 | 浏览/下载：39/0 | 提交时间：2013/03/25

In this paper we designed an intelligent 808nm high-power semiconductor laser therapeutic apparatus with the LPC2138 ARM processor. The laser is driven by the digital constant current source module and the apparatus has good human-machine interaction performance on account of set the parameters intelligently. The function such as operation mode output power output pulse width and pulse cycle could be easily set through the TFT touch screen. The application software could transmission the log data to the computer by the USB interface in order to check and study the records later. 2011 IEEE.

High power diode laser with beam coupling (EI CONFERENCE) 会议论文 OAI收割
Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China
作者: Wang L.; Liu Y.; Wang L.; Liu Y.; Liu Y.

收藏 | 浏览/下载：63/0 | 提交时间：2013/03/25

As the increasing applications of the semiconductor lasers in the laser processing the single 2-D stack optic-power density has not satisfied the actual requirements. It demands to couple several diode laser stack beams to one to improve the brightness and it becomes the central issue to adopt the appropriate beam coupling technology which would offer high quality and high efficiency. In this paper it mainly introduces the beam shaping and the technology of spatial coupling polarization coupling and wavelength coupling. The coupling key elements are presented and indicated. Finally the development of the diode laser on beam coupling in our country fell behind through analyzing the statement of the world. Our lab is studying on polarization coupling and wavelength coupling. We gain some results by phase which the polarization coupling efficiency can achieve 90% for two LD stacks with seven bars whose luminous wavelength is 975nm and980nm.By two 808nm diode laser coupling the efficiency of 60% can be achieved after focusing to the beam size of 22mm2. 2008 SPIE.

Vertical-external-cavity surface-emitting lasers: Numerical simulation, and characterization (EI CONFERENCE) 会议论文 OAI收割
Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China
作者: Qin L.

收藏 | 浏览/下载：29/0 | 提交时间：2013/03/25

Firstly the vertical external-cavity surface-emiting lasers (VECSELs) device structure and model was given and the output characteristic was simple calculated. Then in experiment the VECSELs were grown bonded on to the heat sink and optically pumped by high-power 808nm diode laser array with fiber output module the light emission spectra were measured. Finally The thermal characteristic of the VECSELs was investigated by changing the temperature of the substrate. 2008 SPIE.

808nm high-power high-efficiency GaAsP/GaInP laser bars (EI CONFERENCE) 会议论文 OAI收割
Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China
作者: Wang Y.; Wang L.; Wang L.; Wang L.; Liu Y.

收藏 | 浏览/下载：31/0 | 提交时间：2013/03/25

808nm high power diode lasers which is rapidly maturing technology technically and commercially since the introduction in 1999 of complete kilowatt-scale diode laser systems have important applications in the fields of industry and pumping solid-state lasers (DPSSL). High power and high power conversion efficiency are extremely important in diode lasers and they could lead to new applications where space weight and electrical power are critical. High efficiency devices generate less waste heat which means less strain on the cooling system and more tolerance to thermal conductivity variation a lower junction temperature and longer lifetimes. Diode lasers with Al-free materials have superior power conversion efficiency compared with conventional AlGaAs/GaAs devices because of their lower differential series resistance and higher thermal conductivity. 808nm GaAsP/GalnP broad-waveguide emitting diode laser bars with 1mm cavity length have been fabricated. The peak power can reach to 100.9W at 106.5A at quasicontinuous wave operation (200s 1000Hz). The maximum power conversion efficiency is 57.38%. Based on these high power laser bars we fabricate a 1 3 arrays the maximum power is 64.3 W in continuous wave mode when the current is 25.0A. And the threshold current is 5.9A the slope efficiency is 3.37 W/A. 2008 SPIE.

Research on animal laser varicose treatment in CIOMP, CAS (EI CONFERENCE) 会议论文 OAI收割
Fifth International Conference on Photonics and Imaging in Biology and Medicine, September 1, 2006 - September 3, 2006, Wuhan, China
作者: Zhang L.; Guo J.; Guo J.; Li D.; Zhang L.

收藏 | 浏览/下载：23/0 | 提交时间：2013/03/25

The work on laser varicose treatment carried out in CIOMP It provides minimal invasion CAS cooperating with The First Clinical Hospital often under local anesthesia and intravenous sedation thereby eliminating the need for general anesthesia Jilin University is summarized. Dozens of animal experiments adopting dog and rabbit samples are made in a long time of several years. Different lasers are used greatly shortens postoperative recovery term including long pulse frequency-doubled Nd:YAG(532nm) and semiconductor laser(808nm). Dozens of animal experiments show that laser has good efficacy to occlude the vein vessels. It has precise adjustability and relatively short treatment time only needing outpatient office setting with high cost and effect rate and it is highly safe with no side effects and no serious complications.

808nmInGaAsP单量子阱激光器激射波长的温度依赖性 期刊论文 OAI收割
半导体学报, 2005, 期号: 09, 页码: 1793-1797
作者: 秦莉

收藏 | 浏览/下载：21/0 | 提交时间：2013/03/11

单量子阱激光器 808nm InGaAsP 温度特性

1.41 W Nd: YAG laser at 556 nm end-pumped by laser diode arrays (EI CONFERENCE) 会议论文 OAI收割
ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China
Jia F.-Q.; Zheng Q.; Xue Q.-H.; Bu Y.-K.; Qian L.-S.

收藏 | 浏览/下载：18/0 | 提交时间：2013/03/25

A Nd: YAG laser has longitudinally pumped by a fiber coupling 20 W laser diode array with emission wavelength at 808nm in a three folded cavity configuration. After a 150 m thickness etalon was inserted into the cavity the 1112nm fundamental laser operation was obtained and then intracavity-frequency-doubling with a LBO crystal produced 1.41W of stable output at 556nm.