机构

• 长春光学精密机械与物... [9]
• 宁波材料技术与工程研... [1]
• 中国科学院大学 [1]

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• OAI收割 [10]
• iSwitch采集 [1]

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• 会议论文 [8]
• 期刊论文 [3]

发表日期

• 2017 [1]
• 2008 [1]
• 2007 [2]
• 2006 [2]
• 2005 [4]
• 2004 [1]
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浏览/检索结果: 共11条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 基于磁/光响应型上转换复合纳米探针的三阴乳腺癌特异性检测研究 期刊论文  OAI收割 中国科学院大学(中国科学院宁波材料技术与工程研究所), 2017, 页码: 71 作者:  叶羽凡   |  收藏  |  浏览/下载：46/0  |  提交时间：2018/12/04 980nm激光  上转换纳米材料  三阴乳腺癌  Egfr  磁共振成像   A novel bottom-emitting vcsel's one-dimension array (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China 作者:  Wang L.;  Wang L.;  Wang L.;  Liu Y.;  Liu Y. 收藏  |  浏览/下载：25/0  |  提交时间：2013/03/25 A novel 980nm bottom-emitting VCSELs array with high power density and good beam property of Gaussian far-field distribution is reported. This array is composed of 5 symmetrically-arranged elements of 200m  150m and 100m-diameter  with the center spacings of 300m and 250m respectively. The maximum power is 880mW at a current of 4A  corresponding to lKW/cm2 average optical power density. The differential resistance is 0.09 with a threshold of 0.56A. The novel array is compared with a 300m-aperture-size single device and a 44 2-D array with 50m element aperture size and 250m centre spacing. The three devices have the same lasing area. The conclusion is that the novel array is better in the property of output power  threshold current  lasing spectra  far-field distribution etc. 2008 SPIE.   Large aperture low threshold current 980nmVCSELs fabricated with pulsed anodic oxidation (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China Jinjiang C.; Yongqiang N.; Te L.; Guangyu L.; Yan Z.; Biao P.; Yanfang S.; Lijun W. 收藏  |  浏览/下载：31/0  |  提交时间：2013/03/25 Pulsed anodic oxidation technique  a new way of forming current blocking layers  was successfully used in ridge-waveguide QW laser fabrication. We apply this method in 980nm VCSELs fabrication to form a high-quality native oxide current blocking layer  which simplify the device process. A significant reduction of threshold current and a distinguished device performance are achieved. The 500m-diameter device has a current threshold as low as 0.48W. The maximum CW operation output power at room temperature is 1.48W. The lateral divergence angle //and vertical divergence angle are as low as 15.3 and 13.8 without side-lobes at a current of 6A.   High-power ingaas vcsel's single devices and 2-d arrays 期刊论文  iSwitch采集 Journal of luminescence, 2007, 卷号: 122, 页码: 571-573 作者:  Li, Te;  Ning, Yongqiang;  Sun, Yanfang;  Wang, Chao;  Liu, Jun 收藏  |  浏览/下载：18/0  |  提交时间：2019/05/10 Vcsels  2-d arrays  Quantum well  High power  980nm   High power diode pumped Vertical External-cavity Surface-emitting Lasers (VECSELS) (EI CONFERENCE) 会议论文  OAI收割 IRMMW-THz 2006 - 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics, September 18, 2006 - September 22, 2006, Shanghai, China 作者:  Qin L. 收藏  |  浏览/下载：17/0  |  提交时间：2013/03/25 We describe the theoretical analysis and calculations of the 980nm high-power diode-pumped vertical external cavity surface emitting laser (VECSEL). The VECSEL with active region of InGaAs/GaAsP/AlGaAs system can be operated near 500mw in a single transverse mode. 2006 IEEE.   Theoretical results of vertical external cavity surface emitting laser (VECSEL) (EI CONFERENCE) 会议论文  OAI收割 IRMMW-THz 2006 - 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics, Sep 18 - 22 2006, Shanghai, China 作者:  Qin L. 收藏  |  浏览/下载：14/0  |  提交时间：2013/03/25 We calculate the characteristic parameters of 980nm infrared vertical external cavity surface emitting laser with the KP method and give the result of the relative longitudinal confinement factor  threshold gain and output power. 2006 IEEE.   High-power InGaAs/GaAs VCSEL's two-dimension arrays (EI CONFERENCE) 会议论文  OAI收割 ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China 作者:  Liu Y.;  Wang L.-J.;  Wang L.-J.;  Liu Y.;  Liu Y. 收藏  |  浏览/下载：26/0  |  提交时间：2013/03/25 Selectively oxidized InGaAs/GaAs vertical -cavity surface-emitting lasers (VCSEL) array at an emission wavelength of 980nm was reported. A 16 elements array with 200m aperture size (250m center spacing) of individual elements shows a CW output power of 1.21 W at room temperature  resulting in 1 KW/cm2 average optical power density. The device threshold current is 1.32A The lasing peak wavelength is 981.9 nm  the full width at half-maximum is 0.7 nm  and the far-field divergence angle is about 17.The characteristics of a single device with a active region diameter of 800m is compared with that of a 2-D array with active region diameter of individual clement of 200m. These two kinds of devices have the same total lasing area. At the same current injection  the single device has a higher threshold and a higher output power than the array. The red shift of single device is more obvious than that of the array's.   980nm high power Vertical External-cavity Surface-emitting Semiconductor Lasers (VECSEL) (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Materials and Devices for Optical Communications, November 7, 2005 - November 10, 2005, Shanghai, China 作者:  Ning Y.-Q.;  Wang L.-J.;  Wang L.-J.;  Qin L. 收藏  |  浏览/下载：15/0  |  提交时间：2013/03/25 We describe the design  fabrication  and calculation characteristics of the 980nm high-power diode-pumped vertical external-cavity surface-emitting laser(VECSEL).From our calculation  the VECSEL with active region of InGaAs/GaAsP/AlGaAs system can operate near 1w in a single transverse mode.   Numerical simulation and experiment of novel semiconductor/superlattice distributed Bragg reflectors (EI CONFERENCE) 会议论文  OAI收割 Optical Transmission, Switching, and Subsystems III, November 7, 2005 - November 10, 2005, Shanghai, China 作者:  Zhao Y.;  Zhao Y.;  Zhao Y.;  Wang X.;  Wang X. 收藏  |  浏览/下载：17/0  |  提交时间：2013/03/25 We introduced a novel semiconductor/superlattice AlAs/(GaAs/AlAs) distributed Bragg reflector (DBR)  and the reflection spectrum of the DBR at 980nm wavelength is simulated by employing transfer matrix method. By adjusting the thickness of AlAs layer and the period of superlattice GaAs/AlAs  the DBR with center wavelength at 1500nm is also investigated theoretically. In experiment  this kind of DBR is grown on GaAs (100) substrate. From the measured reflection spectrum  the central wavelength is about 980 nm with high reflectivity.   Vertical-external-cavity surface-emitting lasers operating at different wavelength: Design, numerical simulation, and characteristics (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Materials and Devices for Optical Communications, November 7, 2005 - November 10, 2005, Shanghai, China 作者:  Qin L.;  Jiang H.;  Wang L.;  Wang L.;  Wang L. 收藏  |  浏览/下载：21/0  |  提交时间：2013/03/25 We describe design  numerical simulation and characteristics of high-power optical pumped VECSELs at different wavelength (980nm  and 1300nm). The device design realizes the integrating diode-pumped lasers with vertical-cavity surface-emitting laser structure  drawing on the advantages of both. With periodical gain element structure  optical pumped VECSEL is scalable to watt level output. The characteristics such as threshold condition and output power are calculated theoretically. An optimum number of quantum wells and external mirror reflectivity are obtained from the calculation results  and the thermal characteristic is also considered. Finally the calculation results also predict high output power in this kind of device structure.