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• 半导体材料 [5]
• 半导体物理 [4]
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浏览/检索结果: 共68条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Uncovering the hierarchical clusters in the heat-affected zone of an electron beam welded α/β titanium alloy joint 期刊论文  OAI收割 JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2024, 卷号: 174, 页码: 120-132 作者:  Xu, C.;  Shao, X. H.;  Yang, H. J.;  Lv, M.;  Liu, H. Q.   |  收藏  |  浏览/下载：39/0  |  提交时间：2024/01/08 TC17 titanium alloy  Electron beam welding (EBW)  The ghost structure  Transmission Kikuchi diffraction (TKD)  Transmission electron microscopy (TEM)   CBED Tools for semi-automatic measurement of crystal thicknesses 期刊论文  OAI收割 JOURNAL OF APPLIED CRYSTALLOGRAPHY, 2017, 卷号: 50, 页码: 313-319 作者:  Shi Honglong;  Luo Minting;  Wang Wenzhong 收藏  |  浏览/下载：28/0  |  提交时间：2017/04/07 Convergent-beam Electron Diffraction  Thickness Measurement  Kossel-mollenstedt Fringes  Electron Diffraction  Computer Programs   Quantification of the microstructures of high purity nickel subjected to dynamic plastic deformation 期刊论文  OAI收割 Acta Materialia, 2012, 卷号: 60, 期号: 3, 页码: 1322-1333 Z. P. Luo; H. W. Zhang; N. Hansen; K. Lu 收藏  |  浏览/下载：55/0  |  提交时间：2013/02/05 Quantification  Nickel  Dynamic plastic deformation  Strain rate  Convergent beam electron diffraction  mechanical-properties  deformed metals  large strains  shear bands  fcc  metals  evolution  disorientations  recrystallization  parameters  density   Vi/ii ratio-dependent growth and photoluminescence of cubic cdse epilayers by molecular beam epitaxy 期刊论文  iSwitch采集 Journal of crystal growth, 2011, 卷号: 329, 期号: 1, 页码: 1-5 作者:  Zhao, Jie;  Zeng, Yiping;  Yang, Qiumin;  Li, Yiyang;  Cui, Lijie 收藏  |  浏览/下载：35/0  |  提交时间：2019/05/12 Reflection high-energy electron diffraction  X-ray diffraction  Atomic force microscopy  Molecular beam epitaxy  Cadmium compounds  Semiconducting ii-vi materials   Growth and annealing of zinc-blende cdse thin films on gaas (001) by molecular beam epitaxy 期刊论文  iSwitch采集 Applied surface science, 2011, 卷号: 257, 期号: 21, 页码: 9038-9043 作者:  Yang, Qiumin;  Zhao, Jie;  Guan, Min;  Liu, Chao;  Cui, Lijie 收藏  |  浏览/下载：34/0  |  提交时间：2019/05/12 Cdse  Molecular beam epitaxy  Reflection high energy electron diffraction  X-ray diffraction  Atomic force microscopy   VI/II ratio-dependent growth and photoluminescence of cubic CdSe epilayers by molecular beam epitaxy 期刊论文  OAI收割 JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 329, 期号: 1, 页码: 1-5 作者:  Zhao, Jie;  Zeng, Yiping;  Yang, Qiumin;  Li, Yiyang;  Cui, Lijie   |  收藏  |  浏览/下载：16/0  |  提交时间：2021/02/02 Reflection high-energy electron diffraction  X-ray diffraction  Atomic force microscopy  Molecular beam epitaxy  Cadmium compounds  Semiconducting II-VI materials   VI/II ratio-dependent growth and photoluminescence of cubic CdSe epilayers by molecular beam epitaxy 期刊论文  OAI收割 JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 329, 期号: 1, 页码: 1-5 作者:  Zhao, Jie;  Zeng, Yiping;  Yang, Qiumin;  Li, Yiyang;  Cui, Lijie   |  收藏  |  浏览/下载：16/0  |  提交时间：2021/02/02 Reflection high-energy electron diffraction  X-ray diffraction  Atomic force microscopy  Molecular beam epitaxy  Cadmium compounds  Semiconducting II-VI materials   Growth and annealing of zinc-blende CdSe thin films on GaAs (001) by molecular beam epitaxy 期刊论文  OAI收割 APPLIED SURFACE SCIENCE, 2011, 卷号: 257, 期号: 21, 页码: 9038-9043 作者:  Yang, Qiumin;  Zhao, Jie;  Guan, Min;  Liu, Chao;  Cui, Lijie   |  收藏  |  浏览/下载：15/0  |  提交时间：2021/02/02 CdSe  Molecular beam epitaxy  Reflection high energy electron diffraction  X-ray diffraction  Atomic force microscopy   Growth and annealing of zinc-blende CdSe thin films on GaAs (001) by molecular beam epitaxy 期刊论文  OAI收割 APPLIED SURFACE SCIENCE, 2011, 卷号: 257, 期号: 21, 页码: 9038-9043 作者:  Yang, Qiumin;  Zhao, Jie;  Guan, Min;  Liu, Chao;  Cui, Lijie   |  收藏  |  浏览/下载：17/0  |  提交时间：2021/02/02 CdSe  Molecular beam epitaxy  Reflection high energy electron diffraction  X-ray diffraction  Atomic force microscopy   Control of N/N2 species ratio in NO plasma for p-type doping of ZnO (EI CONFERENCE) 会议论文  OAI收割 作者:  Chen X.;  Liu L.;  Liu L.;  Li B.;  Li B. 收藏  |  浏览/下载：20/0  |  提交时间：2013/03/25 Nitrogen-doped ZnO thin films were grown on c-plane sapphire (Al 2O3) substrates via plasma-assisted molecular beam epitaxy using plasma activated nitric oxide (NO) as the oxygen source and dopant. X-ray diffraction measurements indicate that a small NO flux benefits the crystal quality of the thin films. Hall effect measurements indicate that the electron density of the ZnO films decreases gradually with decreasing NO flux  and the conduction reverses to p-type at a certain flux. Optical emission spectra indicate that the N atom content in the NO plasma increases with decreasing NO flux  and the origin of this is discussed. X-ray photoelectron spectroscopy measurements demonstrate that the number of N atom occupied O sites in the ZnO lattice increases correspondingly. 2011 American Institute of Physics.