中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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浏览/检索结果: 共9条,第1-9条 帮助

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Impact dynamics of granular flow on rigid barriers: insights from numerical investigation using material point method 期刊论文  OAI收割
JOURNAL OF MOUNTAIN SCIENCE, 2024, 卷号: 21, 期号: 12, 页码: 4083-4111
作者:  
Yu, Fangwei;  Su, Lijun;  Li, Xinpo;  Zhao, Yu
  |  收藏  |  浏览/下载:5/0  |  提交时间:2025/01/24
Post-failure analysis of landslide blocking river using the two-phase double-point material point method: a case of western Hubei, China 期刊论文  OAI收割
BULLETIN OF ENGINEERING GEOLOGY AND THE ENVIRONMENT, 2023, 卷号: 82, 期号: 3, 页码: -
作者:  
Du, Wenjie;  Sheng, Qian;  Fu, Xiaodong;  Chen, Jian;  Wei, Pengfei
  |  收藏  |  浏览/下载:22/0  |  提交时间:2023/08/02
Progress in ceramic materials and structure design toward advanced thermal barrier coatings 期刊论文  OAI收割
Journal of Advanced Ceramics, 2022, 卷号: 11, 期号: 7
作者:  
Wei,Zhi-Yuan;  Meng,Guo-Hui;  Chen,Lin;  Li,Guang-Rong;  Liu,Mei-Jun
  |  收藏  |  浏览/下载:65/0  |  提交时间:2022/07/14
Synthesis of non-agglomerating submicron/nano-Yb2Si2O7 powders by a carbon-coated coprecipitation method 期刊论文  OAI收割
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2022, 页码: 7
作者:  
Liu, Jingting;  Luo, Zhixin;  Yang, Jinxing;  Oh, Yoonsuk;  Wu, Zhen
  |  收藏  |  浏览/下载:51/0  |  提交时间:2022/07/01
(La0.2Ce0.2Nd0.2Sm0.2Eu0.2)PO4: A high-entropy rare-earth phosphate monazite ceramic with low thermal conductivity and good compatibility with Al2O3 期刊论文  OAI收割
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2019, 卷号: 35, 期号: 12, 页码: 2892-2896
作者:  
Zhao, Zifan;  Chen, Heng;  Xiang, Huimin;  Dai, Fu-Zhi;  Wan, Xiaohui
  |  收藏  |  浏览/下载:109/0  |  提交时间:2021/02/02
(La0.2Ce0.2Nd0.2Sm0.2Eu0.2)PO4: A high-entropy rare-earth phosphate monazite ceramic with low thermal conductivity and good compatibility with Al2O3 期刊论文  OAI收割
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2019, 卷号: 35, 期号: 12, 页码: 2892-2896
作者:  
Zhao, Zifan;  Chen, Heng;  Xiang, Huimin;  Dai, Fu-Zhi;  Wan, Xiaohui
  |  收藏  |  浏览/下载:119/0  |  提交时间:2021/02/02
Thermal cycling behavior of YSZ and La-2(Zr0.7Ce0.3)(2)O-7 as double-ceramic-layer systems EB-PVD TBCs 期刊论文  OAI收割
journal of alloys and compounds, 2012, 卷号: 525, 页码: 87-96
Xu ZH; He LM; Mu RD; Lu F; He SM; Cao XQ
收藏  |  浏览/下载:27/0  |  提交时间:2013/05/20
Research on AlInGaN Quaternary Alloys as MQW Barriers in GaN-Based Laser Diodes 期刊论文  OAI收割
SPECTROSCOPY AND SPECTRAL ANALYSIS, 2009, 卷号: 29, 期号: 6, 页码: 1441-1444
作者:  
Chen, WH;  Liao, H;  Hu, XD;  Li, R;  Jia, QJ
收藏  |  浏览/下载:19/0  |  提交时间:2016/06/29
The spectral feature analysis of semiconductor thin disk laser (EI CONFERENCE) 会议论文  OAI收割
Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China
作者:  
Li J.;  Wang L.-J.;  Wang L.-J.;  Ning Y.-Q.;  Li J.
收藏  |  浏览/下载:24/0  |  提交时间:2013/03/25
The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of semiconductor disk laser  and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperature. We can see that: with increasing pump power  the thermal effects of the gain material becomes seriously and causes the saturation of carrier lifetime  so the electron-hole pair created in the absorbtion layer have no enough time to rate to one of the wells  and the non-radiative recombination happens in the barrier. When the thermal effects becomes stronger  the chip will not lasing. This phenomenon is from the smaller energy offset between barrier and quantum well. We optimize the original structure design and experimental technology. A non-absorbing AlGaAs layer who is transparent to the pumping and laser wavelength is added to confine the carriers in the quantum wells. At the same time a DBR with double reflecting band is induced to improve the absorbing efficiency of the pumping light. The single QW is replaced by the three narrow QWs  This three QWs structure can add the quantum state of QW  increase the recombination probability of carriers in the QWs and reduce the heat effect. The chemical etch equipment is also improved to control the surface unevenness to be within 50 nm.