中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
机构
采集方式
内容类型
发表日期
学科主题
筛选

浏览/检索结果: 共7条,第1-7条 帮助

条数/页: 排序方式:
A Speed Measurement Method for High Speed Moving Target in Bright Light Environment 会议论文  OAI收割
Hangzhou, China, 2023-04-14
作者:  
Dong, Sen;  Guan, Lei;  Wang, Hao;  Huang, JiJiang
  |  收藏  |  浏览/下载:12/0  |  提交时间:2024/01/12
High luminous fluorescence generation using Ce:YAG transparent ceramic excited by blue laser diode 期刊论文  OAI收割
OPTICAL MATERIALS EXPRESS, 2018, 卷号: 8, 期号: 9, 页码: 2760-2767
作者:  
Sun, Minyuan;  Yuan, Yuan;  Wang, Dongzhou;  Zhou, Bojian;  Feng, Shaowei
  |  收藏  |  浏览/下载:43/0  |  提交时间:2018/12/04
Enhancement of LLLIs with improved BCP and matrix completion 期刊论文  OAI收割
ELECTRONICS LETTERS, 2017, 卷号: 53, 期号: 9, 页码: 586-587
作者:  
Yang, Jie
  |  收藏  |  浏览/下载:25/0  |  提交时间:2017/06/06
Bright light suppresses form-deprivation myopia development through dopamine D1 receptor signaling related ON pathway activation 会议论文  OAI收割
2016年第一届北京视觉科学会议, 北京, 2016-07
作者:  
Xiangtian Zhou;  Si Chen;  Zhina Zhi;  QingQing Ruan;  Fen Li
收藏  |  浏览/下载:32/0  |  提交时间:2017/01/11
Single-step direct fabrication of luminescent Cu-doped ZnxCd1-xS quantum dot thin films via a molecular precursor solution approach and their application in luminescent, transparent, and conductive thin films 期刊论文  OAI收割
nanoscale, 2014, 卷号: 6, 期号: 16, 页码: 9640-9645
Chen, Yanyan; Li, Shenjie; Huang, Lijian; Pan,Daocheng
收藏  |  浏览/下载:33/0  |  提交时间:2015/03/27
Ultraviolet electroluminescence of ZnO based heterojunction light emitting diode (EI CONFERENCE) 会议论文  OAI收割
12th International Conference on II-VI Compounds, September 12, 2005 - September 16, 2005, Warsaw, Poland
Jiao S. J.; Lu Y. M.; Shen D. Z.; Zhang Z. Z.; Li B. H.; Zhang J. Y.; Yao B.; Liu Y. C.; Fan X. W.
收藏  |  浏览/下载:24/0  |  提交时间:2013/03/25
ZnO/GaN p-i-n heterojunctions light emitting diodes were fabricated by plasma-assisted molecular beam epitaxy. We make use of high resistivity of nitrogen doped ZnO to fabricate n-ZnO/i-ZnO/p-GaN heterojunction light emitting diode. The emission of i-ZnO was obtained due to the limitation effect of i-ZnO on electrons and holes. Moreover  n-ZnO/i-MgO/p-GaN heterojunction light emitting diode was also fabricated. The limitation effect on electrons is increased in this heterojunction. The bright ultraviolet electroluminescence at 382 nm originating from the ZnO layer was observed in the room temperature electroluminescence spectrum. We hope to realize the stimulated emission of ZnO using these heterojunctions by the improvement of crystal quality and the optimization of device structure. 2006 WILEY-VCH Verlag GmbH Co. KGaA.  
Developing of in-suit long trance profiler for testing slope error of aspherical optical Elements (EI CONFERENCE) 会议论文  OAI收割
ICO20: Optical Devices and Instruments, August 21, 2005 - August 26, 2005, Changchun, China
Zhou C.; Li H.; Chen C.; Zhou C.; Qian S.
收藏  |  浏览/下载:35/0  |  提交时间:2013/03/25
Profile error of super smooth surface of optical elements at X-ray/EUV in synchrotron radiation (SR) light beam line is described as slope error of them generally. The Long Trace Profiler (LPT) is used for testing surface slope error of SR optical elements in world generally. It is requisite to use In-suit LTP measuring surface thermal distortion of SR optical elements with high heat under high bright SR source. Authors design an In-suit LTP by means of co-path interferometer with pencil light beam. The instrument not only can be used for testing slope error of mirrors in Lab. also in situation test the distortion of mirror with high heat load at synchrotron light beam line. The device can be used to test various absolute surface figures of optical elements such as aspherieal  spherical and plane. It is needless standard reference surface. It is named by LTP-III. This paper describes its basic operating principle  optical system  mechanical constructions  DC serve motor control system  array detector  data acquisition system and computer system for controlling and data analysis of LTP-III. The Instrument has advantages of high accuracy  low cost  multifunction and wide application. Length of surface measured of optical element accuracy is 0.04 arcsec.