机构

• 兰州化学物理研究所 [2]
• 长春光学精密机械与物... [1]
• 中国科学院大学 [1]

采集方式

• OAI收割 [3]
• iSwitch采集 [1]

内容类型

• 期刊论文 [3]
• 会议论文 [1]

发表日期

• 2017 [1]
• 2016 [2]
• 2007 [1]

学科主题

• 材料科学与物理化学 [2]

筛选

浏览/检索结果: 共4条，第1-4条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Impacts of growth orientation and N incorporation on the interface-states and the electrical characteristics of Cu/GaAsN Schottky barrier diodes 期刊论文  OAI收割 Physica B: Condensed Matter, 2017, 卷号: 527, 页码: 52-56 作者:  Li J(李健);  Han XX(韩修训);  Gao, Xin;  Yoshio Ohshita;  Han XX(韩修训)   |  收藏  |  浏览/下载：24/0  |  提交时间：2017/12/18 Gaasn  Schottky Barrier Diodes (Sbds)  Growth Orientation  C-v And G/ω-v Characteristics  Interface States   Passivation effect of atomic layer deposition of al2o3 film on hgcdte infrared detectors 期刊论文  iSwitch采集 Journal of electronic materials, 2016, 卷号: 45, 期号: 9, 页码: 4716-4720 作者:  Zhang, Peng;  Ye, Zhen-Hua;  Sun, Chang-Hong;  Chen, Yi-Yu;  Zhang, Tian-Ning 收藏  |  浏览/下载：88/0  |  提交时间：2019/05/09 Ald al2o3  Minority carrier lifetime  C-v characteristics  R-v characteristics  Baking stability   Electrical characterization of Cu Schottky contacts to n-type GaAsN grown on (311)A/B GaAs substrates 期刊论文  OAI收割 Journal of Alloys and Compounds, 2016, 卷号: 657, 页码: 325-329 作者:  Dong C(董琛);  Han XX(韩修训);  Gao, Xin;  Yoshio Ohshita;  Masafumi Yamaguchi 收藏  |  浏览/下载：28/0  |  提交时间：2015/12/30 GaAsN  Schottky diode  Growth orientation  I-V characteristics  C-V characteristics  Electrical properties   The synthesis and field emission property of carbon nanotubes on carbon fibers substrate (EI CONFERENCE) 会议论文  OAI收割 Technical Digest of the 20th International Vacuum Nanoelectronics Conference, IVNC 07, July 8, 2008 - July 12, 2008, Chicago, IL, United states Leyong Z.; Weibiao W.; Jingqiu L.; Yuxue X.; Da L.; Song C.; Haifeng Z. 收藏  |  浏览/下载：32/0  |  提交时间：2013/03/25 Using ferrocene as catalyst precursor  C2H2 as carbon source  carbon nanotubes (CNTs) with uniform density were synthesized on carbon fibers substrate by floating catalyst method. The morphology and microstructure were characterized by field emission scanning electron microscope (FESEM) and high-resolution transmission electron microscopy (HRTEM). The observation showed that the length of CNTs is about 2 m  the average space between adjacent CNTs is about 300 nm and the diameter of CNT is about 45 nm. The less dense "short and stubby" aligned CNTs films should have good electron field emission characteristics. The results of field emission showed that the emission current of CNTs/carbon fibers was 5 A at the field of 2.5 V/m  and the emission current can be 280 A with a field of 7 V/m (the specimen area is 0.25 cm2 and the distance between cathode and anode is 200 m). The calculation based on the F-N plot indicated that the field enhancement factor of CNTs tip is 499122. Using the conductivity and chemical stability of carbon fibers and the uniform and sparse density distribution of CNTs on carbon fibers substrate  the tip predominance of carbon nanotubes can be exerted  and simultaneously the effect of screening effects between adjacent carbon nanotubes on the field emission performance can also be effectively decreased. The CNTs synthesized on carbon fibers substrate has many predominances for the fabrication of cold cathode devices. For example  using the removability of carbon fibers  the cathode of CNTs/carbon fibers can be arbitrarily moved  enlaced or combined to form different patterns  and the cathode of CNTs/carbon fibers can be also fabricated in large size. Therefore  CNTs/carbon fibers may have potential application in field emission displays.