机构

• 半导体研究所 [3]
• 长春光学精密机械与物... [1]
• 水生生物研究所 [1]
• 重庆绿色智能技术研究... [1]
• 合肥物质科学研究院 [1]

采集方式

• OAI收割 [6]
• iSwitch采集 [1]

内容类型

• 期刊论文 [5]
• 会议论文 [2]

发表日期

• 2019 [1]
• 2018 [1]
• 2016 [1]
• 2006 [2]
• 2001 [2]

学科主题

• 光电子学 [1]
• 半导体物理 [1]

筛选

浏览/检索结果: 共7条，第1-7条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Thin-layer fine-sand capping of polluted sediments decreases nutrients in overlying water of Wuhan Donghu Lake in China 期刊论文  OAI收割 ENVIRONMENTAL SCIENCE AND POLLUTION RESEARCH, 2019, 期号: 1, 页码: 10 作者:  Jiao, Yang;  Xu, Lei;  Li, Qingman;  Gu, Sen   |  收藏  |  浏览/下载：34/0  |  提交时间：2020/05/13 Sediments  Wuhan Donghu Lake  Nutrients  Thin-layer sand capping  Water quality   High-performance solar-blind photodetector with graphene and nitrogen-doped reduced graphene oxide quantum dots (rGOQDs) 期刊论文  OAI收割 MATERIALS EXPRESS, 2018, 卷号: 8, 期号: 1, 页码: 105-111 作者:  Zhang, Enliang;  Sun, Tai;  Ge, Bangtong;  Zhang, Weiguo;  Gao, Xuan   |  收藏  |  浏览/下载：39/0  |  提交时间：2018/06/04 rGOQDs  Graphene  Photodetector  UV  Capping Layer   Effective and reproducible method for preparing low defects perovskite film toward highly photoelectric properties with large fill factor by shaping capping layer 期刊论文  OAI收割 SOLAR ENERGY, 2016, 卷号: 136, 期号: 无, 页码: 505-514 作者:  Ye, Jiajiu;  Zhu, Liangzheng;  Zhou, Li;  Liu, Xuepeng;  Zhang, Xuhui   |  收藏  |  浏览/下载：28/0  |  提交时间：2017/11/21 Perovskite Solar Cell  Corrosive Anti-solvent  Capping Layer  Thickness   Temperature dependence of carrier transfer and exciton localization in ZnO/MgZnO heterostructure (EI CONFERENCE) 会议论文  OAI收割 作者:  Zhang J.;  Zhang J.;  Zhang J.;  Li B.;  Li B. 收藏  |  浏览/下载：20/0  |  提交时间：2013/03/25 MgZnO/ZnO heterostructure was fabricated on sapphire substrate by plasma assistant molecular beam epitaxy. The micro-photoluminescence spectra of sample are reported  which shows that different emission peaks would appear when the laser beam focuses different deepness in the film. A carrier tunneling process from the MgZnO capping layer to ZnO layer was observed by the measured temperature dependence of photoluminescence spectra. This induces the emission intensity of the ZnO grew monotonically from 81 to 103 K. 2006 Elsevier B.V. All rights reserved.   Optical and electrical investigation of low dimensional self-assembled InAs quantum dot field effect transistors 会议论文  OAI收割 2nd asian conference on nanoscience and nanotechnology, beijing, peoples r china, nov 24-27, 2004 Zeng, YX (Zeng, Yuxin); Liu, W (Liu, Wei); Yang, FH (Yang, Fuhua); Xu, P (Xu, Ping); Tan, PH (Tan, Pingheng); Zheng, HZ (Zheng, Houzhi); Zeng, YP (Zeng, Yiping); Xing, YJ (Xing, Yingjie); Yu, DP (Yu, Dapeng) 收藏  |  浏览/下载：113/31  |  提交时间：2010/03/29 InAs quantum dot  photoluminescence  modulation-doped  field effect transistor  MU-M  CAPPING LAYER   Photoluminescence properties of self-organized ingaas/gaas quantum dot structures 期刊论文  iSwitch采集 Journal of infrared and millimeter waves, 2001, 卷号: 20, 期号: 1, 页码: 20-24 作者:  Niu, ZC;  Wang, XD;  Miao, ZH;  Feng, SL 收藏  |  浏览/下载：28/0  |  提交时间：2019/05/12 Inas/gaas self-organized quantum dots photoluminescence  Molecular beam epitaxy  Ingaas capping layer   Photoluminescence properties of self-organized InGaAs/GaAs quantum dot structures 期刊论文  OAI收割 journal of infrared and millimeter waves, 2001, 卷号: 20, 期号: 1, 页码: 20-24 Niu ZC; Wang XD; Miao ZH; Feng SL 收藏  |  浏览/下载：119/4  |  提交时间：2010/08/12 InAs/GaAs self-organized quantum dots photoluminescence  molecular beam epitaxy  InGaAs capping layer  1.35 MU-M  OPTICAL-PROPERTIES  EMISSION  LAYER