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	Study of Temperature Effects on the Design of Active Region for 808 nm High-Power Semiconductor Laser 期刊论文 OAI收割 CRYSTALS, 2023, 卷号: 13, 期号: 1 作者: Wu, Shunhua; Li, Te; Wang, Zhenfu; Chen, Lang; Zhang, Jiachen \| 收藏 \| 浏览/下载：37/0 \| 提交时间：2023/02/14 semiconductor laser temperature effects carrier confinement internal quantum efficiency
	Effect of symmetry breaking on the optical absorption of semiconductor nanoparticles 期刊论文 OAI收割 PHYSICAL REVIEW B, 2011, 卷号: 84, 期号: 3 Gali, A; Kaxiras, E; Zimanyi, GT; Meng, S 收藏 \| 浏览/下载：25/0 \| 提交时间：2013/09/17 MULTIPLE EXCITON GENERATION PBSE QUANTUM DOTS EFFICIENCY CARRIER MULTIPLICATION CDSE NANOCRYSTALS ELECTRONIC-STRUCTURE COLLOIDAL PBSE RODS CONFINEMENT FILMS
	Temperature dependent photoluminescence of an In(Ga)As/GaAs quantum dot system with different areal density 期刊论文 OAI收割 journal of physics d-applied physics, 2010, 卷号: 43, 期号: 29, 页码: art. no. 295401 Zhou XL (Zhou X. L.); Chen YH (Chen Y. H.); Liu JQ (Liu J. Q.); Jia CH (Jia C. H.); Zhou GY (Zhou G. Y.); Ye XL (Ye X. L.); Xu B (Xu Bo); Wang ZG (Wang Z. G.) 收藏 \| 浏览/下载：345/26 \| 提交时间：2010/08/17 CARRIER RELAXATION STATES SUPERLATTICES CONFINEMENT LASER
	Investigation of growth mode in ZnO thin films prepared at different temperature by plasma-molecular beam epitaxy (EI CONFERENCE) 会议论文 OAI收割 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004, 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004 Liang H. W.; Lu Y. M.; Shen D. Z.; Yan J. F.; Li B. H.; Zhang J. Y.; Liu Y. C.; Fan X. W. 收藏 \| 浏览/下载：37/0 \| 提交时间：2013/03/25 High-quality ZnO thin films on c-plane sapphire (Al2O 3) substrates were prepared by plasma-molecular beam epitaxy (P-MBE). The influence of growth temperature on growth mode of ZnO was investigated. Real-time monitored by reflection high-energy electron diffraction (RHEED) images show that below 500 C ZnO thin film was grown by three-dimension (3D) growth mode. While the two-dimension (2D) growth mode was obtained above growth temperature of 650 C. Atomic force microscopy (AFM) images present that the surface morphology of ZnO thin film with 2D growth is improved and X-ray rocking curves (XRC) indicate that the full width at half maximum (FWHM) of the ZnO (0 0 2) peak becomes narrow. From the photoluminescence (PL) spectra ultraviolet (UV) emission peak exhibits obvious blue-shift for the samples grown at lower temperature which is attributed to the effect of the quantum confinement arisen from small crystal grain sizes. The minimum carrier concentration of N=7.661016 cm-3 was obtained in the ZnO thin films with the 2D grown which is closed to that of bulk ZnO. 2005 Elsevier B.V. All rights reserved.
	Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures 会议论文 OAI收割 international conference on materials for advanced technologies, singapore, singapore, dec 07-12, 2003 作者: Han PD 收藏 \| 浏览/下载：88/1 \| 提交时间：2010/10/29 metalorganic chemical vapor deposition semiconducting III-V materials DOPED AL(X)GA1-XN/GAN HETEROSTRUCTURES CARRIER CONFINEMENT EFFECT TRANSISTORS PHOTOLUMINESCENCE MOBILITY HETEROJUNCTION INTERFACE HFETS