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浏览/检索结果: 共18条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Three-Dimensional Terahertz Continuous Wave Imaging Radar for Nondestructive Testing 期刊论文  OAI收割 IEEE ACCESS, 2020, 卷号: 8, 页码: 144259-144276 作者:  Zhang, Xiaoxuan;  Chang, Tianying;  Wang, Zhongmin;  Cui, Hong-Liang   |  收藏  |  浏览/下载：31/0  |  提交时间：2020/10/12 Radar imaging  Imaging  Three-dimensional displays  Free electron lasers  Bandwidth  Quantum cascade lasers  Continuous wave imaging sensors  nondestructive testing  three-dimensional reconstruction  all-solid-state electronics   Laser-quality Tm:(Lu0.8Sc0.2)2O3 mixed sesquioxide ceramics shaped by gelcasting of well-dispersed nanopowders 期刊论文  OAI收割 Journal of the American Ceramic Society, 2019, 卷号: 102, 期号: 8, 页码: 4919-4928 作者:  H.Wu;  G.-H.Pan;  Z.Hao;  L.Zhang;  X.Zhang   |  收藏  |  浏览/下载：44/0  |  提交时间：2020/08/24 Pumping (laser),Ceramic materials,Continuous wave lasers,Nanostructured materials   Theoretical study on thermal characteristic of MgO: PPLN crystal in high power optical parametric oscillator 期刊论文  OAI收割 Optik, 2019, 卷号: 178, 页码: 190-196 作者:  K.Zhang;  F.Chen;  Q.K.Pan;  D.Y.Yu;  Y.He   |  收藏  |  浏览/下载：28/0  |  提交时间：2020/08/24 Optical parametric oscillator,MgO: PPLNCrystal,Temperature,distribution,Contacting surface topography,Heat transfer,periodically poled linbo3,continuous-wave,2nd-harmonic generation,lasers,Optics   Primary investigation the impacts of the external memory (DDR3) failures on the performance of Xilinx Zynq-7010 SoC based system (MicroZed) using laser irradiation 期刊论文  OAI收割 Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 2017 作者:  Liu Shuhuan;  Du Xuecheng;  Du Xiaozhi;  Zhang Yao;  Mubashiru Lawal Olarewaju 收藏  |  浏览/下载：124/0  |  提交时间：2017/06/20 Continuous wave lasers  Digital storage  Failure modes  Irradiation  Laser beam effects  System-on-chip   Anomalous Temperature Dependence of Photoluminescence in InAs/InAlGaAs/InP Quantum Wire and Dot Hybrid Nanostructures 期刊论文  OAI收割 chinese physics letters, 2011, 卷号: 28, 期号: 2, 页码: article no.27801 作者:  Xu B 收藏  |  浏览/下载：67/3  |  提交时间：2011/07/05 CONTINUOUS-WAVE OPERATION  EMISSION  LASERS  WAVELENGTH  EXCITONS  ENERGY   Room temperature electrically pumped four-port square resonator microlasers 期刊论文  OAI收割 2011 symposium on photonics and optoelectronics, sopo2011, 2011, 期号: 1, 页码: 5780553 Lin, Jian-Dong; Che, Kai-Jun; Huang, Yong-Zhen; Yao, Qi-Feng; Lv, Xiao-Meng; Yang, Yue-De; Xiao, Jin-Long; Du, Yun 收藏  |  浏览/下载：33/0  |  提交时间：2012/06/13 Continuous wave lasers  Optical interconnects  Optics  Optoelectronic devices  Photonic integration technology  Photonics  Resonators  Semiconductor lasers  Waveguides   Efficient and compact intracavity-frequency-doubled YVO4/Nd:YVO4/KTP laser through analysis of the interaction length 期刊论文  OAI收割 Optics Communications, 2010, 卷号: 283, 期号: 17, 页码: 3324-3327 F. J. Zhuang, Y. Q. Zheng, C. H. Huang, Y. Wei, H. Y. Zhu and G. Zhang 收藏  |  浏览/下载：21/0  |  提交时间：2012/11/02 CW lasers  YVO4/Nd:YVO4 composite crystal  Diode end pumping  Second  harmonic generation  continuous-wave  diode-laser  532 nm  crystal  nd   Efficient and compact intracavity-frequency-doubled YVO4/Nd:YVO4/KTP laser through analysis of the interaction length 期刊论文  OAI收割 Optics Communications, 2010, 卷号: 283, 期号: 17, 页码: 3324-3327 F. J. Zhuang, Y. Q. Zheng, C. H. Huang, Y. Wei, H. Y. Zhu and G. Zhang 收藏  |  浏览/下载：15/0  |  提交时间：2012/11/02 CW lasers  YVO4/Nd:YVO4 composite crystal  Diode end pumping  Second  harmonic generation  continuous-wave  diode-laser  532 nm  crystal  nd   Temperature characteristics of high power vertical cavity surface emitting lasers (EI CONFERENCE) 会议论文  OAI收割 Semiconductor Lasers and Applications III, November 12, 2007 - November 13, 2007, Beijing, China 作者:  Qin L. 收藏  |  浏览/下载：30/0  |  提交时间：2013/03/25 By using oxidation confinement technology high power vertical-cavity surface-emitting lasers are fabricated in experiment. The electrical and optical performance characteristics such as threshold current  efficiency  emission wavelength  and output power are measured under continuous wave (CW) condition at room temperature. The maximum output power is up to watt regime at wavelength of about 980nm. The temperature characteristics of the device are investigated experimentally in detail. The variation in lasing threshold current with temperature is studied. The characteristic temperature T0 of the device is derived  and the value is about 211K. Such a high characteristic temperature T0 of threshold current can lead to good temperature sensitivity of the device. At the same time  the lasing spectrum characteristics with temperature are also measured. The wavelength shift with temperature is just about 0.06nm/K. From the measured results  it is shown that the device can still operate at high temperature condition.   808nm high-power high-efficiency GaAsP/GaInP laser bars (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China 作者:  Wang Y.;  Wang L.;  Wang L.;  Wang L.;  Liu Y. 收藏  |  浏览/下载：24/0  |  提交时间：2013/03/25 808nm high power diode lasers  which is rapidly maturing technology technically and commercially since the introduction in 1999 of complete kilowatt-scale diode laser systems  have important applications in the fields of industry and pumping solid-state lasers (DPSSL). High power and high power conversion efficiency are extremely important in diode lasers  and they could lead to new applications where space  weight and electrical power are critical. High efficiency devices generate less waste heat  which means less strain on the cooling system and more tolerance to thermal conductivity variation  a lower junction temperature and longer lifetimes. Diode lasers with Al-free materials have superior power conversion efficiency compared with conventional AlGaAs/GaAs devices because of their lower differential series resistance and higher thermal conductivity. 808nm GaAsP/GalnP broad-waveguide emitting diode laser bars with 1mm cavity length have been fabricated. The peak power can reach to 100.9W at 106.5A at quasicontinuous wave operation (200s  1000Hz). The maximum power conversion efficiency is 57.38%. Based on these high power laser bars  we fabricate a 1 3 arrays  the maximum power is 64.3 W in continuous wave mode when the current is 25.0A. And the threshold current is 5.9A  the slope efficiency is 3.37 W/A. 2008 SPIE.