机构

• 金属研究所 [1]
• 长春光学精密机械与物... [1]
• 上海光学精密机械研究... [1]

采集方式

• OAI收割 [3]

内容类型

• 期刊论文 [2]
• 会议论文 [1]

发表日期

• 2008 [1]
• 2005 [1]
• 2004 [1]

学科主题

• 光学薄膜 [1]

筛选

浏览/检索结果: 共3条，第1-3条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 基底温度对直流磁控溅射ITO透明导电薄膜性能的影响 期刊论文  OAI收割 中国激光, 2008, 卷号: 35, 期号: 12, 页码: 2031, 2035 曾维强; 姚建可; 贺洪波; 邵建达 收藏  |  浏览/下载：1439/179  |  提交时间：2009/09/22 薄膜  ITO透明导电膜  基底温度  直流磁控溅射  Crystal grain sizes  Direct current magnetron sputtering  Direct currents  Glass substrates  Indium oxides  Interplanar spacings  ITO transparent conductive thin films  Mass fractions  Substrate temperature  X-ray diffractions   Investigation of growth mode in ZnO thin films prepared at different temperature by plasma-molecular beam epitaxy (EI CONFERENCE) 会议论文  OAI收割 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004, 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004 Liang H. W.; Lu Y. M.; Shen D. Z.; Yan J. F.; Li B. H.; Zhang J. Y.; Liu Y. C.; Fan X. W. 收藏  |  浏览/下载：44/0  |  提交时间：2013/03/25 High-quality ZnO thin films on c-plane sapphire (Al2O 3) substrates were prepared by plasma-molecular beam epitaxy (P-MBE). The influence of growth temperature on growth mode of ZnO was investigated. Real-time monitored by reflection high-energy electron diffraction (RHEED) images show that  below 500 C  ZnO thin film was grown by three-dimension (3D) growth mode. While the two-dimension (2D) growth mode was obtained above growth temperature of 650 C. Atomic force microscopy (AFM) images present that the surface morphology of ZnO thin film with 2D growth is improved and X-ray rocking curves (XRC) indicate that the full width at half maximum (FWHM) of the ZnO (0 0 2) peak becomes narrow. From the photoluminescence (PL) spectra  ultraviolet (UV) emission peak exhibits obvious blue-shift for the samples grown at lower temperature  which is attributed to the effect of the quantum confinement arisen from small crystal grain sizes. The minimum carrier concentration of N=7.661016 cm-3 was obtained in the ZnO thin films with the 2D grown  which is closed to that of bulk ZnO. 2005 Elsevier B.V. All rights reserved.   EXAFS study of mechanical-milling-induced solid-state amorphization of Se 期刊论文  OAI收割 Journal of Non-Crystalline Solids, 2004, 卷号: 333, 期号: 3, 页码: 246-251 Y. H. Zhao; K. Lu; T. Liu 收藏  |  浏览/下载：19/0  |  提交时间：2012/04/14 absorption fine-structure  different grain sizes  amorphous selenium  silicon  attrition  crystal  alloys  zr